Inmos Limited

Elizabeth Ann Smith

Michael K Thompson

Richard N Campbell

In a semiconductor polycide resistive element having a first region of polysilicon of one conductivity type and second regions of polysilicon of opposite conductivity type, with silicide overlying the polysilicon but not the first region, the edges of the silicide are spaced apart from the boundaries between the opposite conductivity types.

Semiconductor element incorporating a resistive device

A method of fabricating a polycide semiconductor element in which a lift-off mask is formed on a first region of a layer of polysilicon. A first dopant is implanted into second regions of the polysilicon which are adjacent the first region, the first region being masked from implantation by the lift-off mask. A layer of silicide is forced over the implanted regions and the lift-off mask and then the lift-off mask and the respective part of the layer of silicide which is deposited thereover are removed thereby to expose the first region. The method may be used to fabricate a resistive device in a polycide semiconductor element. There is also disclosed a semiconductor element, e.g. a resistive device, made by the method.

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Malpas, United Kingdom

Elizabeth Ann Smith