Hitachi Global Storage Technologies Netherlands B.v.

Spin Memory, Inc.

Hgst Netherlands, B.v.

USA As Represented by Secretary of the Navy

Integrated Silicon Solution, (cayman) Inc.

Other

International Business Machines Corporation

Elizabeth Ann Dobisz

Mustafa Pinarbasi

Ricardo Ruiz

Thomas D Boone

Pradeep Manandhar

Yuan-Tung Chin

Girish Jagtini

Robert Fontana

Jui-lung Li

Christie R Marrian

Gabriel Zeltzer

Prachi Shrivastava

Guoliang Liu

Zvonimir Z Bandic

Kuok San Ho

Neil Smith

Henry Hung Yang

Walter J Dressick

David Thomas Margulies

Olav Hellwig

Xiao Z Wu

Martin C Peckerar

Marie-Claire Cyrille

James Lamar Nix

Mu-San Chen

Franck Dreyfus Rose Dit Rose

Susan L Brandow

Joan K Bosworth

Kee W Rhee

Son Van Nguyen

Thomas R Albrecht

Jeffrey Scott Lille

James Mac Freitag

Jeffrey Childress

Ching Hwa Tsang

Kurt A Rubin

Bernhard E Knigge

Wipul Jayasekara

Marcin Gajek

Bartlomiej Adam Kardasz

Michail Tzoufras

Meng Ding

Patrick Rush Webb

Paul Franklin Nealey

Scott Arthur MacDonald

Davide Guarisco

Jacob Anthony Hernandez

Eric S Snow

Girish Jagtiani

Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a semiconductor comprises: a first device at a first semiconductor level within a multi terminal device stack; wherein the first device is coupled to a first terminal; a second device at a second semiconductor level within the multi terminal device stack, wherein the second device is coupled to a second terminal; a third terminal is coupled to the second device and a fourth terminal is coupled to the first device, wherein the first terminal and second terminal are independently coupled to the first device and second device respectively. The first terminal, the second terminal, the third terminal and the fourth terminal couple components included in the multi terminal stack to components not included in the multi terminal stack.

Multi terminal device stack systems and methods

Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a multi terminal fabrication process comprises: performing an initial pillar layer formation process to create layers of a multi terminal stack; forming a first device in the layers of the multi terminal stack; forming a second device in the layers of the multi terminal stack; and constructing a set of terminals comprising: a first terminal coupled to the first device, a second terminal coupled to the second device; and a third terminal coupled to the first device; wherein at least two terminals in the set of terminals are independent. The third terminal can be coupled to the second device.

Multi terminal device stack formation methods

Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a semiconductor comprises: a first device at a first semiconductor level within a multi terminal device stack; wherein the first device is coupled to a first terminal; a second device at a second semiconductor level within the multi terminal device stack, wherein the second device is coupled to a second terminal; and a third terminal is coupled to the first device, wherein the first terminal and second terminal are independently coupled to the first device and second device respectively. The third terminal can be coupled to the second device. The first terminal, the second terminal, and third terminal and couple components included in the multi terminal stack to components not included in the multi terminal stack.

A method for manufacturing a magnetic memory element array that includes the use of a Ru hard mask layer and a diamond like carbon hard mask layer formed over the Ru hard mask layer. A plurality of magnetic memory element layers are deposited over a wafer and a Ru hard mask layer is deposited over the plurality of memory element layers. A layer of diamond like carbon is deposited over the Ru hard mask layer, and a photoresist mask is formed over the layer of diamond like carbon. A reactive ion etching is then performed to transfer the image of the photoresist mask onto the diamond like carbon mask, and an ion milling is performed to transfer the image of the patterned diamond like carbon mask onto the underlying Ru hard mask and memory element layers. The diamond like carbon mask can then be removed by reactive ion etching.

Method for manufacturing a magnetic memory element using Ru and diamond like carbon hard masks

A method for manufacturing a magnetic random access memory array at a density greater than would be possible using photolithography. A template is formed having a pattern that is configured to define a memory array. A block copolymer material is deposited onto the template and annealed to form narrow cylinders of ordered block copolymer material. A metal oxide is then diffused into the cylinders to form narrow metal oxide cylinders. The metal oxide cylinders can then be used as mask structures to pattern a hard mask layer. An ion milling process can then be performed to transfer the image of the patterned hard mask onto an underlying magnetic memory material to form an array having features sizes smaller than what would be possible using photolithography.

Method for manufacturing magnetic tunnel junction pillars using photolithographically directed block copolymer self-assembly and organometallic gas infusion

The various embodiments described herein include methods, devices, and systems for fabricating and performing operations on magnetic memory devices. In one aspect, a magnetic memory device includes: (1) a reference magnetic layer configured to have a first current threshold corresponding to a spin current level required to change a magnetic polarization of the reference magnetic layer; (2) a composite magnetic layer comprising a plurality of non-magnetic layers and a plurality of magnetic layers including a storage layer; and (3) a non-magnetic spacer layer between the reference magnetic layer and the composite magnetic layer; where the composite magnetic layer is configured such that the second current threshold is lowered, without decreasing thermal stability of the magnetic memory device, by spin current and/or coupling fields between adjacent magnetic layers of the plurality of magnetic layers.

Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer

A method for improving photo resist adhesion to an underlying hard mask layer. The method includes a cleaning step that includes applying tetramethylammonium hydroxide (TMAH) to coat a hard mask layer of a wafer. The method further includes puddle developing the wafer for a first desired amount of time, and rinsing the wafer in running water for a second desired amount of time. The method further includes spin drying the wafer, and baking the wafer for a third desired amount of time. The method concludes with the proceeding of subsequent photolithographic processes on the wafer.

Process for improving photoresist pillar adhesion during MRAM fabrication

A method for manufacturing magnetic random access memory. The method allows very high density magnetic memory elements to be formed on a magnetic memory chip. A magnetic memory element material is deposited and a diamond like carbon (DLC) hard mask is formed over the magnetic memory element material. An ion or atom bombardment process such as ion milling is performed to remove portions of the magnetic memory element material that are not protected by the hard mask to form a plurality of magnetic memory element pillars. Because the diamond like carbon hard mask is resistant to the material removal processes such as ion milling, it can be made very thin (10-20 nm), which reduces shadowing while still allowing a process such as ion milling to be used to define the magnetic data element pillars. This advantageously allows the pillars to be formed with well defined, vertical sidewalls, and avoiding shorting.

Method for manufacturing high density magnetic random access memory devices using diamond like carbon hard mask

A method for manufacturing a magnetic random access memory array at a density greater than would be possible using photolithography. A hard mask material is deposited over a magnetic memory element material, and a chemical template layer such as brush or mat material is deposited over the hard mask. A mask structure is formed over the soluble polymer. The mask structure is configured with openings having a center to center spacing that is an integer multiple of a block copolymer material. The openings in the mask structure can be shrunk by depositing a spacer material. The chemical template layer is chemically patterned, such as by a quick plasma exposure and the mask is removed. A block copolymer material is then deposited over the chemical template and annealed to form block copolymer cylinders that are located over the patterned portions of the chemical template and between the patterned portions.

Method for manufacturing high density magnetic tunnel junction devices using photolithographic VIAS and chemically guided block copolymer self assembly

A method for manufacturing a magnetic random access memory array at a density greater than would be possible using photolithography. The method involves patterning a chemical template material with patterned portions separated by a center to center distance that is substantially equal to a natural period of a block copolymer. A block copolymer material is then deposited and annealed to form self assembled cylinders that are located over the patterned regions of the chemical template and also over areas between the patterned regions. The chemical template layer can be patterned by depositing a first, preliminary block copolymer, over a mask structure and annealing the mask structure to form cylinders in the openings in the mask structure. The cylinders can be removed leaving openings, and a UV exposure can be performed to expose and treat portions of the chemical template layer that are exposed through the opening.

Method for manufacturing a chemical guidance pattern for block copolymer self assembly from photolithographically defined topographic block copolymer guided self assembly

A method for making a master mold that is used in the nanoimprinting process to make patterned-media disks with patterned data islands uses guided self-assembly of a block copolymer into its components. Conventional or e-beam lithography is used to first form a pattern of generally radial stripes on a substrate, with the stripes being grouped into annular zones or bands. A block copolymer material is then deposited on the pattern, resulting in guided self-assembly of the block copolymer into its components to multiply the generally radial stripes into generally radial lines. Various methods, including conventional lithography, guided self-assembly of a second block copolymer, and e-beam lithography, are then used to form concentric rings over the generally radial lines. After etching and resist removal, the master mold has a pattern of either pillars or holes, depending on the method used.

Patterned magnetic recording disk with high bit-aspect-ratio and master mold for nanoimprinting the disk

A method for making a master mold used to nanoimprint patterned magnetic recording disks that have chevron servo patterns with minimal defects uses directed self-assembly of block copolymers. A pattern of chemically modified polymer brush material is formed on the master mold substrate. The pattern includes sets of slanted stripes and interface strips between the sets of slanted stripes. A block copolymer material is deposited on the pattern, which results in directed self-assembly of the block copolymer as lamellae perpendicular to the substrate that are formed into alternating slanted stripes of alternating first and second components of the block copolymer. This component also forms on the interface strips, but as a lamella parallel to the substrate. One of the components is then removed, leaving the remaining component as a grid that acts as a mask for etching the substrate to form the master mold. The disks nanoimprinted by the master mold have reduced defective areas in the transition regions of the chevron servo patterns.

Method using block copolymers for making a master mold for nanoimprinting patterned magnetic recording disks with chevron servo patterns

Block copolymer lithography has emerged as an alternative lithographic method to achieve large-area, high-density patterns at resolutions near or beyond the limit of conventional lithographic techniques for the formation of bit patterned media and discrete track media. In one embodiment, a structure includes a plurality of nanostructures extending upwardly from a substrate and a porous membrane extending across upper ends of the plurality of nanostructures. Other systems and methods are disclosed as well.

Supporting membranes on nanometer-scale self-assembled films

A method using directed self-assembly of BCPs enables the making of a master disk for nanoimprinting magnetic recording disks that have patterned data islands and patterned binary encoded nondata marks. The method uses guided self-assembly of a BCP to form patterns of sets of radial lines and circumferential gaps of one of the BCP components, which can be used as an etch mask to make the master disk. The sets of radial lines and circumferential gaps can be patterned so as to encode binary numbers. The pattern is replicated as binary encoded nondata marks into the nanoimprinted disks, with the marks functioning as binary numbers for data sector numbers and/or servo sector numbers. If the disks also use a chevron servo pattern, the binary numbers can function to identify groups of tracks associated with the chevron servo pattern.

Method using block copolymers for making a master disk with radial binary encoded nondata marks for nanoimprinting patterned magnetic recording disks

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San Jose, CA, United States of America

Elizabeth Ann Dobisz