Hgst Netherlands, B.v.

Elizabeth Ann Brinkman

Brian Rodrick York

Ning Shi

Jeffrey Childress

Matthew Joseph Carey

Sue Siyang Zhang

Young-Suk Choi

A method for manufacturing a magnetic write head that has improved write poled uniformity and bevel angle control. The method uses a damascene process to form the write pole, wherein a trench is formed in a RIEable fill layer, and an adhesion layer is located only in areas outside of the trench. A seed layer is deposited into the trench, followed by a non-magnetic gap layer followed by electroplating of a magnetic material. A chemical mechanical polishing process is then performed, thereby forming a magnetic write pole within the trench. The adhesion layer located outside of the trench prevents de-lamination during the chemical mechanical polishing. However, not having any adhesion layer in the trench prevent oxidation related waviness or other deformation of the sides of the write pole.

Method for manufacturing a magnetic write pole with a consistent bevel angle

A magnetic head according to one embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer; and a pole layer of a magnetic material above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein. A magnetic head according to another embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer, the pole seed layer being comprised primarily of a material selected from a group consisting of NiCr, Ta/Ru, Ta/Rh, NiCr/Ru, NiCr/Rh, NiCr, CoOx, Ru, Rh, Cu, Au/MgO, Ta/Cu; and a pole layer comprised primarily of CoFe above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein.

Substrate nitrogen plasma treatment for softer CoFe main pole writer formation

A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).

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Santa Clara, CA, United States of America

Elizabeth Ann Brinkman