Stmicroelectronics S.a.

Stmicroelectronics (grenoble 2) Sas

Stmicroelectronics (alps) Sas

Elise Le Roux

Philippe Candelier

Christophe Forel

Joel Damiens

Leonardo Valencia Rissetto

A method can be used for programming a group of memory cells of a non-volatile memory device in a programming window that has a duration longer than a programming duration of a memory cell. The programming window is subdivided into a number of time intervals. A programming profile that was determined by simulation while taking into account a reference criterion is retrieved. The programming profile includes, for each time interval, a maximum number of memory cells that can be triggered for programming within each time interval. The memory device is programmed in the programming window, interval-wise, using the programming profile.

Method for programming a non-volatile memory device and corresponding non-volatile memory device

A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.

Method for controlling the breakdown of an antifuse memory cell

A method for forming a memory cell including a selection transistor and an antifuse transistor, in a technological process adapted to the manufacturing of a first and of a second types of MOS transistors of different gate thicknesses, this method including the steps of: forming the selection transistor according to the steps of manufacturing of the N-channel transistor of the second type; and forming the antifuse transistor essentially according the steps of manufacturing of the N-channel transistor of the first type, by modifying the following step: instead of performing a P-type implantation in the channel region at the same time as in the N-channel transistors of the first type, performing an N-type implantation in the channel region at the same time as in the P-channel transistors of the first type.

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Grenoble, France

Elise Le Roux