Texas Instruments Corporation

Elisabeth Marley Koontz

Antonio Luis Pacheco Rotondaro

Trace Quentin Hurd

Donald Andrew Powell

Paul Lawrence Rancuret

Benjamin Lowell Lee

Terry A Barlett

A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Semiconductor device with gate-undercutting recessed region

A semiconductor device comprising a gate structure on a semiconductor substrate and a recessed-region in the semiconductor substrate. The recessed-region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Crystallographic preferential etch to define a recessed-region for epitaxial growth

Disclosed is a system and method for aligning a free-space optical signal in an optical system having a light modulator having an array of pixels. In this system and method, certain pixels of the light modulator array are initially assigned for the modulation of the free-space optical signal. An alignment optical signal is generated and monitored, to determine whether the optical system components are properly aligned. The alignment optical signal is generated and propagated along a path that is substantially aligned with the path of the free-space optical signal. Detector elements are used to monitor the position (and shifts in the position) of the free-space optical signal. By reassigning the pixels of the array of the light modulator at the direction of a control system, it is possible for the light modulator to compensate for shifts in the alignment of the optical components within the system.

Feedback control for free-space optical systems

The present invention facilitates semiconductor fabrication by providing methods of fabrication that tailor applied strain profiles to channel regions of transistor devices. A strain profile is selected for the channel regions (). Recessed regions are formed () in active regions of a semiconductor device after formation of gate structures according to the selected strain profile. A recess etch () is employed to remove a surface portion of the active regions thereby forming the recess regions. Subsequently, a composition controlled recess structure is formed () within the recessed regions according to the selected strain profile. The recess structure is comprised of a strain inducing material, wherein one or more of its components are controlled and/or adjusted during formation () to tailor the applied vertical channel strain profile.

Tailoring channel strain profile by recessed material composition control

An optical module having an integral optical waveguide with waveguide ports at each end. The optical waveguide receives an input light beam through a first waveguide port. The input light beam passes through the waveguide and is emitted from the second waveguide port, where it is reflected by the reflective surface. After being reflected by the reflective surface, the input light beam can be directed onto the surface of a DMD array, where the input light beam can be selectively reflected in a particular direction. The reflective surface may also comprise a diffractive grating, thereby enabling wavelength selective switching. In addition, the reflective surface may comprise a generally concave surface that converts a diverging input light beam into a generally collimated light beam, thereby facilitating more accurate selection and switching by the DMD array.

Compact DMD-based optical module

The present invention facilitates semiconductor fabrication by providing methods of fabrication that mitigate leakage and apply strain to channel regions of transistor devices. A semiconductor device having gate structures, channel regions, and active regions is provided (). Extension regions of a first type of conductivity are formed within the active regions (). Recesses are then formed within a portion of the active regions (). Second type recess structures are formed () within the recesses, wherein the second type recess structures have a second type of conductivity opposite the first type and are comprised of a strain inducing material. Then, first type recess structures are formed () within the recesses and on the second type recess structures, wherein the first type recess structures have the first type of conductivity and are comprised of a strain inducing material.

Systems and methods for low leakage strained-channel transistor

Disclosed is a method for generating patterns to be used in a spatial light modulator having a plurality of pixels. The method includes generating an optical pattern to be placed upon the pixels of the spatial light modulator, applying the optical pattern to the pixels of the spatial light modulator, measuring the optical performance of the plurality of pixels having the optical pattern applied to it, comparing the measured optical performance to a target optical performance, and adjusting the optical pattern applied to the plurality of pixels to form another optical pattern that more closely achieves the target optical performance.

Growing community of inventors

Dallas, TX, United States of America

Elisabeth Marley Koontz