Nantero, Inc.

Advanced Technology Materials, Inc.

Life Technologies Corporation

Eliodor G Ghenciu

Thomas Rueckes

Claude Louis Bertin

Ramesh Sivarajan

Mitchell Meinhold

X M Henry Huang

Steven L Konsek

Thomas H Baum

Chongying Xu

Michael B Korzenski

Jonathan Wesley Ward

Thierry Yao

H Montgomery Manning

Darren K Brock

J Thomas Kocab

Michael C Pallas

Theodore E Straub

Evan Foster

Brent M Segal

Rahul Sen

Tzong-Ru T Han

Glenn M Tom

Kevin Albert Maher

David W Minsek

James C Nurse

Gary Lim

Alexander S Borovik

Jorge Fonseca

Thomas Ruckes

Thomas Kocab

Tom Kocab

Theodore Straub

XM Henry Huang

Terry Han Tzong-Ru

A system for performing biological reactions is provided. The system includes a chip including a substrate and a plurality of reaction sites. The plurality of reaction sites are each configured to include a liquid sample of at most one nanoliter. Further, the system includes a control system configured to initiate biological reactions within the liquid samples. The system further includes a detection system configured to detect biological reactions on the chip. According to various embodiments, the chip includes at least 20000 reaction sites. In other embodiments, the chip includes at least 30000 reaction sites.

Systems and methods for biological analysis

An apparatus for biological reactions is provided. The apparatus includes a substrate and a plurality of reaction sites within the substrate. A surface of the substrate is configured to have a first hydrophilicity and each surface of the plurality of reaction sites is configured to have a second hydrophilicity to load a substantial number of reaction sites with a sample volume. The sample volume of each loaded reaction site is substantially confined to its respective reaction site. The sample volume is configured to undergo a biological reaction within the reaction site.

Coated substrate for biological reaction systems

Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

Nonvolatile nanotube switch elements using sidewall contacts

A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. Control circuitry is provided in electrical communication with and for applying electrical stimulus to the conductive terminal and to at least a portion of the nanoscopic element stack. At least one of the nanoscopic elements is capable of switching among a plurality of electronic states in response to a corresponding electrical stimuli applied by the control circuitry to the conductive terminal and the portion of the nanoscopic element stack. For each electronic state, the nanoscopic element stack provides an electrical pathway of corresponding resistance.

Nonvolatile nanotube switches with reduced switching voltages and currents

Double density nonvolatile nanotube switch memory cells

Nonvolatile nanotube switches and systems using same

An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.

Two-terminal switching devices comprising coated nanotube elements

Stacked three-dimensional arrays of two terminal nanotube switching devices

Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same

Resistive materials comprising mixed nanoscopic particles and carbon nanotubes

Two-terminal switching device using a composite material of nanoscopic particles and carbon nanotubes

Under one aspect, a nanotube diode includes: a cathode formed of a semiconductor material; and an anode formed of nanotubes. The cathode and anode are in fixed and direct physical contact, and are constructed and arranged such that sufficient electrical stimulus applied to the cathode and the anode creates a conductive pathway between the cathode and the anode. In some embodiments, the anode includes a non-woven nanotube fabric having a plurality of unaligned nanotubes. The non-woven nanotube fabric may have a thickness, e.g., of 0.5 to 20 nm. Or, the non-woven nanotube fabric may include a block of nanotubes. The nanotubes may include metallic nanotubes and semiconducting nanotubes, and the cathode may include an n-type semiconductor material. A Schottky barrier can form between the n-type semiconductor material and the metallic nanotubes and/or a PN junction can form between the n-type semiconductor material and the semiconducting nanotubes.

Growing community of inventors

King of Prussia, PA, United States of America

Eliodor G Ghenciu