Applied Materials Israel Limited

Eli Oren Joni

Boaz Dudovich

Amir Bar

Lior Katz

Shiran Ben Israel

Lior Yehieli

Assaf Ariel

Chen Itzikowitz

Eyal Rot

There is provided a system and method of defect detection of a semiconductor specimen. The method includes obtaining a first image of the specimen acquired at a first bit depth, converting by a first processor the first image to a second image with a second bit depth lower than the first bit depth, transmitting the second image to a second processor configured to perform first defect detection on the second image using a first defect detection algorithm to obtain a first set of defect candidates, and sending locations of the first set of defect candidates to the first processor, extracting, from the first image, a set of image patches corresponding to the first set of defect candidates based on the locations, and performing second defect detection on the set of image patches using a second defect detection algorithm to obtain a second set of defect candidates.

Defect detection of a semiconductor specimen

Growing community of inventors

Rehovot, Israel

Eli Oren Joni