Lam Research Corporation

Eli Jeon

Daniel Boatright

Adrien Lavoie

Purushottam Kumar

Sirish K Reddy

Joseph Abel

Nick Ray Linebarger, Jr

Douglas Walter Agnew

Michael Philip Roberts

Alice Hollister

Gautam Dhar

Rungthiwa Methaapanon

Jeffrey Kersten

William Laurence McDaniel

Arun Anandhan Duraisamy

Kyle Watt Hart

Debotosh Poddar

Philip Chen

Kashyap Subramanya

Showerhead for a substrate processing system

The present disclosure relates to a system for a semiconductor processing. The system includes a semiconductor processing chamber having a plurality of processing stations, a plurality of manifold trunks, a plurality of valves, and a plurality of fluid manifolds. Each manifold trunk includes an outlet, a common flowpath, a plurality of trunk inlets, a plurality of orifices, and a plurality of valve interfaces.

Apparatuses for uniform fluid delivery in a multi-station semiconductor processing chamber

A gas delivery system for a processing chamber includes a first channel for delivering a first chemistry and a second channel for delivering a second chemistry. The first channel includes a first outlet valve and the second channel includes a second outlet valve. A trickle gas source is connected to both the first and the second channels. A first junction is coupled to the first outlet valve and a second junction is connected to the second outlet valve. A common conduit connects between the first junction and the second junction. The first junction includes an input to provide a push gas from a push gas source and the second junction includes an output to a processing chamber. During operation, one of the first channel or the second channel is active at one time. A trickle gas from a trickle gas source is flowed into an active one and a non-active one of the first or second channels. A push inert gas from the push gas source is flowed into the first junction, through the common conduit and out of the second junction to the processing chamber.

Symmetric precursor delivery

A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step. Each of the top facing edge and the lower inner edge have a rounded non-sharp edge and a top of each of the contact support structures is configured for contact with a bottom edge surface of a wafer for lifting and lowering and moving the wafer.

Carrier ring structure and chamber systems including the same

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Sherwood, OR, United States of America

Eli Jeon