Intel Corporation

Cisco Technology, Inc.

Bluebird Optical Mems Ltd.

Elena Sidorov

Elad Peer

Rami Sudai

Yael Nemirovsky

Reuven Elbaum

Steve J Brown

Uri Bear

Victor Sidorov

In one embodiment, memory cell includes a control gate, a floating gate, a substrate comprising a source region and a drain region, a first isolator between the control gate and floating gate, and a second isolator between the floating gate and the substrate. The memory cell is configured to have a retention time that is within a statistical window around a selected lifespan. The selected lifespan may be less than ten years, such as, for example, less than one year, less than one month, or less than one week.

Memory structure for self-erasing secret storage

In one embodiment, a semiconductor device comprises: a bulk comprising a bulk material characterized by a potential designated as a ground, and a bulk thinning detector being a section of the bulk that includes one or more conducting materials. The bulk thinning detector is adapted to be connected to the ground when a part of the bulk material is underneath and contiguous with a portion of the one or more conducting materials in the section. The semiconductor device further comprises: one more electronic components in at least one active layer of the semiconductor device, the one or more electronic components and the bulk thinning detector being included in a circuit for detecting whether there is backside thinning of the semiconductor device by detecting whether at least one of: the bulk thinning detector is disconnected from the ground, or there is a change in resistance of the bulk thinning detector.

Bulk thinning detector

An improved method for providing high-quality optical fiber metallization with the required length at the required location. The method enables metallized optical fibers to be soldered and connected to mechanical components while reducing the level of stress in the metal coatings and providing strong adhesion, good conductivity and connectivity. The advantage of the method is a combination of vacuum evaporation and electroless deposition for the optical fiber metallization. A strong adhesion of the metal layer is achieved by the use of an evaporated thin metal layer, comprising an adhesion layer and a seed layer. The stress reduction is achieved due to electroless deposition, which is adequately thick for subsequent soldering/welding or other applications. The method comprises preparation for evaporation, preparation of optical fibers, evaporation of the thin metal adhesion and seed layer on the optical fiber, electroless deposition of an adequately thick metal layer, and acceptance testing. Metallization of optical fibers at any location across the fiber (patterned metallization) additionally includes application of an organic masking layer to the fiber before the metallization process, metallization of the fiber according to the present invention and subsequent dissolution of the masking layer. The inventive method applies to any fiber, in particular to SM (Single Mode) fibers and to PM (Polarization Maintaining) fibers.

Method for the metallization of optical fibers

Growing community of inventors

Haifa, Israel

Elena Sidorov