Enthone-omi, Inc.

Enthone Incorporated

Elena H Too

Vincent Paneccasio, Jr

Richard W Hurtubise

Paul R Gerst

Juan B Haydu

A copper electroplating bath and a method to plate substrates with the bath are provided. The bath and method are particularly effective to plate electronic components such as semiconductive wafer VLSI and ULSI interconnects with void-free fill copper plating for circuitry forming vias and trenches and other small features less than 0.2 microns with high aspect ratios. The copper bath contains a bath soluble organic divalent sulfur compound, and a bath soluble polyether compound such as a block copolymer of polyoxyethylene and polyoxypropylene, a polyoxyethylene or polyoxypropylene derivative of a polyhydric alcohol and a mixed polyoxyethylene and polyoxypropylene derivative of a polyhydric alcohol. A preferred polyether compound is a mixed polyoxyethylene and polyoxypropylene derivative of glycerine. A preferred copper bath also contains a pyridine compound derivative.

Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect

A plating system and method is provided for electroplating silicon wafers with copper using an insoluble anode wherein the electrolyte is agitated or preferably circulated through an electroplating tank of the system and a portion of the electrolyte is removed from the system when a predetermined operating parameter is met. A copper containing solution having a copper concentration greater than the copper concentration of the removed portion is added to the copper plating system simultaneously or after electrolyte removal, in a substantially equal amount to the electrolyte removed from the system and balances the amount of copper plated and removed in the removal stream. In a preferred method and system, an electrolyte holding tank is provided which serves as a reservoir for circulating electrolyte. The addition of the copper containing solution and removal of working electrolyte is also preferably made from the holding tank. The preferred apparatus is preferably cylindrical and is specially configured so that recirculating electrolyte enters near the anode and exits near the cathode with the outlet of the apparatus having a substantially continuous opening around the periphery of the electroplating tank so that electrolyte exiting the tank has a substantially uniform flow across the surface of the cathode. The anode is preferably circular and has a central through opening through which the entering electrolyte passes.

Copper metallization of silicon wafers using insoluble anodes

The present invention relates to an improved metallic additive free palladium electroplating bath comprising the use of a sulfonic acid compound in combination with a special class of pyridine related nitrogen compounds to both stabilize the bath and to provide white palladium deposits over a wide range of plating thicknesses.

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Branford, CT, United States of America

Elena H Too