France Telecom

Etat Francais Represente Par Le Ministre Delegue Aux Postes Et

Elchuri K Rao

Alain Carenco

Jean-Louis Oudar

Yves Nissim

Marcel Bensoussan

Sylvie Fouchet

Philippe Krauz

This invention relates to a process for producing a matrix of 'all optical' vertically-structured quantum well components. This process consists in the encapsulation of a half-structure constituted by a lower mirror (2) and an active zone (3) partially covered by a self-alignment mask (4) with a negative dielectric layer (7) whose thickness is given by the Bragg condition at the working wavelength. The encapsulated half-structure is thermally treated to induce an alloy interdiffusion (9) in the non-covered parts of the active zone, and covered with one or several negative and positive layers (10,11) so as to complete the upper Bragg mirror.

Process for producing a matrix of 'all optical' vertically-structured

A method of making a component presenting at least one integrated electro-optical and/or photonic function, in which at least one dielectric layer of doped SiO.sub.x is deposited on a quantum well layer based on III/V materials, and in which the resulting sample is heat treated. The thickness of said dielectric layer, the nature of the dopant [isoelectronic, activating or blocking, and/or electronically active of n-type or of p.sub.-- type], and the concentration of the doping, and also the conditions of heat treatment, in such a manner as to confer the desired electro-optical and/or photonic properties to the component.

Method of making an electronic and/or photonic component

Process for locally increasing the refractive indexes of an electrooptical material usable in guided optics and material obtained by this process. The process according to the invention consists of carrying out an implantation of ions (6) of sulphur or a metallic dopant able to take the place of a cation of the crystal lattice of the ferroelectric material (2), followed by annealing at between 300.degree. and 600.degree. C. in order to rearrange the crystal lattice disturbed during implantation and for activating the implanted ions. Ion implantation is carried out in an inclined direction (60) with respect to the normal to the surface of the monocrystalline material (2). For a LiNbO.sub.3 monocrystal, use is made of Ti ions as the dopant. This process makes it possible to produce a guide layer (4) having ordinary and extraordinary refractive indices above those of the pure monocrystal.

Process for locally increasing the refractive indexes of an

Growing community of inventors

Issy-Les-Moulineaux, France

Elchuri K Rao