Avx Israel, Ltd.

Elad Irron

Eitan Avni

Avi Neta

A method for etching metal deposited on a substrate, the method comprising: depositing a metal layer above a substrate; coating at least a portion of the deposited metal layer with a photo-resist; pattering the photo-resist; etching the deposited metal layer with an inert gas plasma at an energy density of less than 0.5 Watt/cm, the substrate being maintained at a temperature of less than 50&#xb0; C.; and ashing a resultant crust with an ashing gas, the ashing gas comprising CFand O.

Method suitable for batch ion etching of copper

A precision RF passive component including: a silicon substrate; a first dielectric layer deposited above the silicon substrate; a first metal layer formed above the first dielectric layer; a second dielectric layer formed above the first metal layer; and a second metal layer formed above the second dielectric layer. In one embodiment a passivation layer is added above the second metal layer. In an exemplary embodiment the first metal layer includes a first adhesion layer, a metal sub-layer, and a second adhesion layer; and the second dielectric layer includes a first diffusion barrier layer, a dielectric sub-layer second diffusion barrier. In an exemplary embodiment, the metal sub-layer includes copper. In another exemplary embodiment the dielectric sub-layer includes SiOor SiNbetween diffusion barrier layers including SiN.

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Gush Segev, Israel

Elad Irron