Samsung Electronics Co., Ltd.

Ejaz Ul Haq

Seung-Moon Yoo

Soo-In Cho

Dae-je Chin

Yun-Ho Choi

Nam-Soo Kang

Seung-Hun Lee

Tae-Sung Jung

Do-Chan Choi

Woung-Moo Lee

Syed Ali

A semiconductor memory device stably operates over a wide range of the power supply voltage by including a power supply voltage level detector for generating detecting signals according to predetermined levels of the power supply voltage and an oscillator for generating a frequency-controlled oscillation pulse whose frequency is changeable according to the detecting signals. Thus, a boosting ratio of a boosting circuit, the refresh period of a refresh circuit and the substrate voltage of a substrate voltage generator can be adaptively changeable according to the variation of the power supply voltage.

Semiconductor memory device

A semiconductor memory device such as a DRAM has an internal oscillator to provide a periodic clock signal. During a read operation, output data is generated synchronized to the internal clock signal, and an external control signal is provided also synchronized to the internal clock signal. A requesting device utilizes the external control signal for fetching data from the memory device at high speed with improved setup and hold time. The control signal output is active only during a read operation, thereby reducing power consumption. Additionally, a common line is used for receiving address, instructions, and data. This drastically reduces the number of pins for interfacing to a memory device.

Semiconductor memory device using asynchronous signal

An electrically erasable and programmable nonvolatile memory device (EEPROM) such as a flash memory, is pin compatible with a dynamic random access memory device (DRAM), such that flash memory may be connected to a DRAM bus. Preferably, the flash memory is read and write timing-compatible with the DRAM read and write signals and is also preferably block read and block write timing compatible with DRAM block read and block write signals. The flash memory accepts signals to perform sleep and erase functions from signal lines of a DRAM bus which are not used by a DRAM. In order to perform a block erase, which is a characteristic of flash memory, the device preferably accepts an instruction to perform a block erase from signal lines of a DRAM bus which are not used by a DRAM and a block address for the block erase from the most significant bit address lines of the DRAM bus.

Nonvolatile semiconductor memory which is connectable to a DRAM bus

Nonvolatile integrated circuit memory devices, such as EEPROMs, use unselected shared latching sense amplifiers to latch data from memory cells which are to be reprogrammed after a page erase, and to resupply the latch data to the memory cells which are to be programmed after erase, to thereby internally reprogram the latched data into erased memory cells after page programming. Transferring circuits and methods are provided for transferring data between shared latching sense amplifiers to permit internal reprogramming. High speed and simplified reprogramming of EEPROMs is thereby provided.

Self-contained reprogramming nonvolatile integrated circuit memory

The present invention relates to a semiconductor memory device and more particularly to a semiconductor memory device capable of executing a self-refresh operation to achieve a low power consumption, and of executing a burn-in operation in wafer and package states as well. A semiconductor memory device comprising a plurality of memory cells arranged in rows and columns, a word line being arranged in each row to select the rows of the plurality of memory cells in response to an input of row address, a bit line being arranged in each column to select the columns of the plurality of memory cells in response to an input of column address, and the row address for designating a row accessed in a previous selection operation upon selection of an arbitrary word line comprising a controller for executing the arbitrary word line selection.

Semiconductor memory device having low power self refresh and burn-in

The present invention relates to a semiconductor memory device, and more particularly to a dynamic random access memory for accomplishing high speed data access by supplying a plurality of row address strobe signals to a chip. A plurality of row address strobe signals are supplied to a plurality of pins, and each row address strobe signal is sequentially supplied with an active signal during a data access operation. Therefore, data in a plurality of memory cell arrays is accessed during one access cycle time. Thus, since a large number of random data are provided, the data access time decreases and the performance of a system can be greatly improved.

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Seoul, South Korea

Ejaz Ul Haq