Rohm Co., Ltd.

Eitaro Oyama

Taichi Hoshino

Shinya Karasawa

Kengo Adachi

Hiroshi Miyahara

A switching transistor has a source connected to the ground and a drain connected to the first terminal. The other end of an inductor whose one end is to be connected to the first terminal is connected to the second terminal. An input voltage is applied to the third terminal. An auxiliary transistor is disposed between the second terminal and the third terminal. A first soft start circuit generates a first soft start voltage that increases with lapse of time, and a second soft start circuit generates a second soft start voltage that increases with a delay to the first soft start voltage. An error amplifier controls the gate voltage of the auxiliary transistor on the basis of the error voltage between the output voltage and the first soft start voltage.

Step-up switching regulator with soft start circuits

A low-voltage operating block and a high-voltage operating block are controlled at the same soft start voltage as that employed at the time of start-up. At a point in time at which an output DC voltage has reached an expected value, a control signal of the low-voltage operating block is switched to a control signal of the high-voltage operating block. As a result, switching is smoothly performed without involvement of occurrence of a variation in the output voltage before and after switching operation. In a switching power supply unit having a low-voltage operating block and a high-voltage operating block, which are intended for producing a higher DC voltage from a low power supply voltage, it prevents occurrence of a rush current and a start-up failure, which would otherwise be caused by switching operation.

Switching power supply unit and controller IC thereof

Accumulation and emission of energy in and from a coil having an intermediate tap is controlled by switching a DC input voltage from a DC power source on and off. Controlled voltages generated at a plurality of terminals are rectified and smoothed to output a plurality of DC output voltages. Connection to a reference voltage is controlled such that the voltages generated at the plurality of terminals are not dependent on the DC input voltage during the on-off switching. Therefore, a switching power supply unit is provided in which a coil having an intermediate tap is used to allow a simple configuration, to convert a DC input voltage into a plurality of DC output voltages with high efficiency, and to achieve compactness.

Switching power supply unit

A voltage drop DC-DC converter includes a switch circuit including a plurality of switches for alternately connecting a first and second capacitors in series and in parallel in response to an output signal of an oscillator circuit oscillating at a constant frequency. An efficient voltage dropping conversion is possible by deriving a voltage divided by the first and second capacitors when the first and second capacitors are connected in series and deriving terminal voltages of the first and second capacitors when the first and second capacitors are connected in parallel. When the derived voltage is increased beyond an aimed reference output voltage, the oscillation of the oscillator circuit is stopped.

Voltage drop DC-DC converter

A semiconductor amplifier circuit comprises a semiconductor substrate of one conductivity type, a well region of the one conductivity type, formed in said semiconductor substrate, a well region defining region of the other conductivity type, including a side wall portion and a bottom portion defining the well region, a first transistor formed in the well region and a second transistor formed on a surface of another portion of the substrate other than a portion on which the well region is formed. When the first and second transistors are in operation, a potential of the substrate is set to a reference potential, a potential of the well region defining region is set equal to the potential of the substrate or set to a value at which a junction between the well region defining region and the substrate is reverse-biased and at least one of the electrodes of the first transistor is set to a potential at which a junction between the well region defining region and the well region is reverse-biased.

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Kyoto, Japan

Eitaro Oyama