Toyoda Gosei Co., Ltd.

Eisuke Yokoyama

Honglin Wang

Hironao Shinohara

A semiconductor light emitting element includes a laminated semiconductor layer including a light emitting layer that emits light by passing a current, the laminated semiconductor layer has a lower semiconductor bottom surface, a semiconductor side surface that rises from an edge of the lower semiconductor bottom surface upwardly and outwardly of the laminated semiconductor layer, and a lower semiconductor top surface that faces upward by extending inwardly of the laminated semiconductor layer from an upper edge of the semiconductor side surface, an edge of the lower semiconductor top surface includes first and second linear portions extending linearly and plural connecting portions connecting the first and second linear portions, and, when viewed from a direction perpendicular to the lower semiconductor top surface, each connecting portion is positioned inside a point of intersection of extended lines of the first and second linear portions connected to the connecting portion.

Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

A semiconductor light emitting element () includes; an n-type semiconductor layer (), a light emitting layer (), a p-type semiconductor layer (), a p-side power supply portion (), and an n-side power supply portion () that includes an n-side power supply electrode (), an n-side auxiliary electrode () and n-side connective electrodes (). The n-side power supply electrode () and auxiliary electrode () are provided in the inner side beyond the p-type semiconductor layer () viewed from the light emitting layer (). On the p-type semiconductor layer (), a power supply insulating layer () transparent to light from the light emitting layer () is provided, and portions at lower side of the n-side power supply electrode () and auxiliary electrode () are set to have a thickness with which the light is easily reflected, and other portions are set to have a thickness with which the light is easily transmitted.

Semiconductor light emitting element and light emitting device

A semiconductor light emitting element suppressing non-uniformity in light emission on a light emitting surface is provided. An n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated in order, and a translucent electrode film is laminated on the p-type semiconductor layer and a p-electrode is provided on the translucent electrode film. On the other hand, an n-electrode is provided on a semiconductor layer exposure surface that exposes the n-type semiconductor layer. The p-electrode includes a connecting portion having a circular planar shape and an extending portion that extends like a long and slender strip from the connecting portion to encircle and face the n-electrode. Holes in the translucent electrode film are provided such that the density thereof is decreased along with a move from the n-electrode side toward the p-electrode side.

Growing community of inventors

Ichihara, Japan

Eisuke Yokoyama