Toppan Photomask Co., Ltd.

Eisuke Narita

Norihito Fukugami

Genta Watanabe

Toru Komizo

There is provided a reflective photomask blank and a reflective photomask having good irradiation resistance and capable of obtaining good transfer performance. A reflective photomask blank () contains a reflective layer () reflecting incident light and an absorption layer () absorbing incident light, which are formed in this order on one surface side of a substrate (). The absorption layer () contains a first material selected from the group consisting of tin, indium, and tellurium and a second material containing one or two or more kinds of materials selected from the group consisting of transition metals, bismuth (Bi), and silicon (Si) at least in the outermost layer. The content of the second material is more than 20 at and less than 50 at % in the same laver.

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Tokyo, Japan

Eisuke Narita