Tokyo Electron Limited

Rohm Co., Ltd.

Eisuke Morisaki

Masayuki Kitamura

Hirokatsu Kobayashi

Jun Yoshikawa

Takashi Shigeoka

Masayuki Harashima

Nobuaki Takahashi

Masatoshi Aketa

Wataru Okase

Tsunenobu Kimoto

Yasushi Yagi

Takeshi Sakuma

Noriaki Kawamoto

Hiraku Ishikawa

Hironori Yagi

Ikuo Sawada

Wataru Machiyama

Yun Mo

Yukio Sano

Tadakazu Murai

Wafer holder for manufacturing semiconductor

A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

Film deposition apparatus and film deposition method

A film deposition apparatus which comprises: a processing chamber having a space inside which serves as a vacuum space to which a film deposition gas is supplied; a substrate supporting unit which is disposed in the vacuum space and supports a substrate; a coil which inductively heats the substrate supporting unit to thereby form a film from the film deposition gas on the substrate and which has been divided into regions; and a coil control unit which controls the coil region by region.

Film deposition apparatus and method

An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.

Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage medium

A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.

Film forming apparatus and method

A method of detecting a temperature of an object in a multiple-reflection environment by a radiation pyrometer includes the steps of detecting a radiation strength emitted from a target region of an object, applying a correction to the radiation strength so as to correct the effect of multiple reflections of a radiation emitted from the object, applying a correction to the radiation strength so as to correct a reflection loss caused at an end surface of an optical medium interposed between the object and a sensing head of the pyrometer, applying a correction to the radiation strength with regard to an optical absorption loss caused in the optical medium, and applying a correction to the radiation strength with regard to a stray radiation coming in to the sensing head from a source other than the target region of the object.

Thermal processing apparatus

The present invention intends to improve the accuracy of temperature measurement when measuring the temperature of a semiconductor wafer by a radiation thermometer on the basis of the idea of virtual blackbody simulated by multiple reflection of light. A system includes a wafer (W), a circular reflector of a radius R disposed opposite to the wafer (W), and a probe ( ) disposed in a through hole formed in the reflector ( ). The probe ( ) is a through hole. The radiation intensity of radiation passed the through hole is determined by image data provided by a CCD camera disposed behind the back surface of the reflector ( ). An error in measured radiation intensity of radiation falling the probe ( ) due to light that enters a space between the wafer (W) and the reflector ( ) and a space between the reflector ( ) and the probe ( ) and light leaks from the same spaces is corrected, the emissivity of the wafer (W) is calculated and the temperature of the wafer (W) is determined.

Radiation temperature measuring method and radiation temperature measuring system

A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000&deg; C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part. When lowering the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area lower (higher) than that at which the gas is supplied to the peripheral part to the central part.

Thermal treatment method and apparatus

A virtual blackbody radiation system ( ) includes a light-emitting unit ( ) including an LED driven by a fixed current, a light-receiving unit ( ) including a sapphire rod, and an optical unit ( ) including lenses ( ) for converging light emitted by the light-emitting unit in a convergent light. A cylindrical member ( )included in the optical unit ( )can be moved along the optical axis by a servomotor ( ) included in a focus adjusting unit ( ) for positional adjustment. The focus of convergent light relative to the light-receiving unit ( ) can be adjusted by moving the lens ( ) disposed in the cylindrical member ( ) along the optical axis relative to the light-receiving unit ( ). The intensity of the convergent light on the light-receiving unit ( ) can be adjusted to the intensity of predetermined blackbody radiation. Thus, the virtual blackbody radiation system ( ) is able to obtain light of a desired intensity without changing the driving current for driving a light source; consequently, the life time of the light source can be extended and the stability of radiation can be improved.

Growing community of inventors

Tsukui-gun, Japan

Eisuke Morisaki