Mitsubishi Heavy Industries Limited

Eishiro Sasakawa

Keisuke Kawamura

Akemi Takano

Hiroshi Mashima

Satoshi Sakai

Yoshiaki Takeuchi

Saneyuki Goya

Hiromu Takatuka

Masahiro Sakaki

Yasuhiro Yamauti

Shigekazu Ueno

An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).

Vacuum processing apparatus and operating method for vacuum processing apparatus

A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic devicehaving a photovoltaic layercomprising a crystalline silicon layer formed on a substrate, wherein the crystalline silicon layer has a crystalline silicon i-layer, and the crystalline silicon i-layerhas a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%.

Photovoltaic device

A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus

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Nagasaki, Japan

Eishiro Sasakawa