Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Eisaku Maeda

Jinsaku Kaneda

Akihiro Maejima

Hiroki Matsunaga

Hiroshi Ando

Masahiko Sasada

Masashi Inao

Hiromi Tsuchida

On a semiconductor chip in a semiconductor integrated circuit, a plurality of circuit cells each of which has a pad are formed along a first chip side of the semiconductor chip. Among the plurality of circuit cells, one or more circuit cells at least in the vicinity of an end portion on the first chip side are arranged having a steplike shift in a direction apart from the first chip side with decreasing distance from the center portion to the end portion on the first chip side.

Semiconductor integrated circuit

The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.

Sustain driver, sustain control system, and display device

In a semiconductor integrated circuit device of the present invention, temperature increase of a bonding wire can be suppressed even when conductive leads are short-circuited with each other, and reliability of the semiconductor integrated circuit device is improved. The conductive leads of a resin package for supplying a power supply section of a semiconductor integrated circuit chip with power from an external power supply are connected with bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires. Furthermore, the conductive leads connected to a GND for supplying the power supply section of the semiconductor integrated circuit chip with a grounding potential are connected with the bonding pads of the semiconductor integrated circuit chip by a plurality of bonding wires.

Semiconductor integrated circuit device, PDP driver, and plasma display panel

A testing method of semiconductor integrated circuit wherein the quality of diffusion for semiconductor chips can be tested before the semiconductor chips become packaged semiconductor integrated circuits is provided. Input data is set, and circuit current values I(L) and I(H) obtained for each of a plurality of circuit areas are compared with first test pass ranges I(L) and I(H) to extract articles within the first test pass (S), and the current values of the circuit areas determined to be articles within the first test pass and second test pass ranges I(L), and I(H) determined based on these current values are compared, thereby conducting a retest to extract circuit areas within the second test pass. The current values may be replaced by the voltage values.

Testing method of semiconductor integrated circuit and information recording medium

The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, wherein a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.

Semiconductor integrated circuit device

A circuit for generating a ternary signal that receives a binary input-control signal and a binary reset signal and outputs a ternary signal. The circuit includes first to third transistors, each source terminal thereof is respectively connected to the three power supplies, and a sequential circuit that outputs control signals controlling the transistors. The sequential circuit outputs control signals that make the first and the third transistors be switched in a complementary manner in an initial state, and make the second and the third transistors be switched in a state that it is released from the initial state.

Circuit for generating ternary signal

Sustain driver, sustain control system, and plasma display

A driver circuit is provided for preventing generation of a pass-through current in a CMOS output unit even if a power supply voltage VDD supplied from a low voltage power supply drops below a recommended operating power supply voltage. The driver circuit includes a level shift unit having PMOS transistors and NMOS transistors, and a CMOS output unit having a PMOS transistor and an NMOS transistor. The source, drain and gate of one PMOS transistor are respectively connected to a high voltage power supply, a first contact and a second contact. The source, drain and gate of a second PMOS transistor are respectively connected to a high voltage power supply, the second contact and the first contact. The source of one NMOS transistor is grounded, the drain thereof is connected to the first contact, and the gate thereof receives a low voltage signal. The source of a second NMOS transistor is grounded, the drain thereof is connected to the second contact, and the gate thereof receives a low voltage signal. In this driver circuit, the driving current of the one PMOS transistor is higher than the driving current of the one NMOS transistor.

Growing community of inventors

Takatsuki, Japan

Eisaku Maeda