Sony Corporation

Eisaku Kato

Minehiro Tonosaki

Akira Ishibashi

Motosuke Ohmi

Hiroyasu Noguchi

Kazushi Nakano

Hiroshi Yoshida

Hiroyuki Okuyama

Masaharu Nagai

Masakazu Ukita

Satoru Kijima

Takashi Yajima

Sakurako Okamoto

Atsushi Toda

Masakazu Yajima

Naoki Sano

Satoshi Taniguchi

Tomonori Hino

Koji Kitagawa

A reflector capable of suppressing contrast reduction caused by retro-reflection, a display device having the same, and a method of manufacturing the same are provided. The reflector includes: a base having first and second surfaces which are opposed to each other, the second surface being provided with a reflective element; and a plurality of burying layers formed around the reflective element and including at least one light absorption burying layer.

Reflector, display device, and method of manufacturing the same

A reflector capable of suppressing contrast reduction caused by retro-reflection of outside light, a display device having the same, and a method of manufacturing the same are provided. The reflector includes: a base having first and second opposed surfaces, the second surface being provided with a reflective element; and a light absorbing film formed in a region other than the reflective element in the second surface.

A heat transport device having a composite structure that is readily manufactured and a method for manufacturing such a heat transport device are provided. The heat transport device includes a first base plate having a liquid suction and retention unit for sucking and retaining a liquid-phase working fluid by capillary force; a second base plate having a face provided with a first concavity functioning as a vaporization chamber for vaporizing the working fluid, a second concavity functioning as a liquefaction chamber for liquefying the working fluid, a first ditch for transporting the vaporized working fluid, a second ditch for transporting the liquefied working fluid, the second base plate comprising a material having a thermal conductivity lower than that of silicon; and a thermoplastic or thermosetting resin material for bonding the first and second base plates. The heat transport device can be readily manufactured by heating the first and second base plates sandwiching a thermoplastic or thermosetting resin material therebetween.

Heat transport apparatus and heat transport apparatus manufacturing method

A compact, thin type and high cooling performance cooling device, an electronic apparatus and a method of manufacturing the same are provided. The cooling device () has a pair of a first substrate () and a second substrate () which are made of such a material having a low thermal diffusibility as glass, formed rectangular and bonded together via a silicon member (). On bonding surfaces of these substrates () and (), grooves () and () are formed. These grooves () and () are formed so as to function as a heat pipe of a loop type when these substrates () and () are bonded.

Cooling device, electronic equipment device, and method of manufacturing cooling device

A cooling device includes a flow-path substrate, an intermediate substrate, and a lid-substrate each made of a polyimide resin, and a condenser substrate incorporated into holes of the intermediate substrate and an evaporator substrate which are made of a metal having a high thermal conductivity, whereby heat from a heat source can be enclosed into the evaporator substrate and the condenser substrate, so that the quantity of the latent heat can be substantially increased.

Cooling device, electronic apparatus, display unit, and method of producing cooling device

The present invention provides a cooling device having improved cooling performance and providing higher flexibility, an electronic apparatus and an acoustic apparatus employing the cooling device, and a method for producing the cooling device. The cooling device is provided with an evaporator that is capable of cooling an object to be cooled, and a condenser that is capable of releasing to the outside heat that has been absorbed during the cooling by the evaporator. A vapor-phase conduit and a liquid-phase conduit, both of which are made of fluorocarbon resin and through which an operating medium flows, are disposed between and coupled to the evaporator and the condenser, thereby circulating the operating medium.

Cooling device, electronic apparatus and acoustic apparatus, and method for producing the cooling device

A semiconductor light emitting device having good characteristics, high reliability and long lifetime includes a p-n junction or p-i-n junction made by locating an active layer in a position inside an n-type doped layer or p-type doped layer sufficiently distant from the depletion layer between the p-type doped layer and the n-type doped layer. When a component of intensity of light from the active layer normal to the active layer is P(x), x for its maximum value P,is x&equals;0, and the range of x satisfying P(x)>P,/e,is &minus;L,<x<L,in a semiconductor light emitting device having a p-n junction, doping concentration of at least a portion of the n-type doped layer where x>&minus;L,is made lower than doping concentration of the other portion of the n-type doped layer, or doping concentration of at least a part of the p-type doped layer where x<L,is made lower than doping concentration of the other part of the p-type doped layer.

Semiconductor light emitting device having a p-n or p-i-n junction

In a method of manufacturing a semiconductor light-emitting device composed of a II-VI compound semiconductor in which at least more than one kind of elements of Zn, Be, Mg, Cd or Hg are used as a II-group element and at least more than one kind of elements of Se, S, Te are used as a VI-group element and which includes first conductivity type and second conductivity type cladding layers and an active layer, a supply ratio VI/II ratio of VI-group element and II-group element required when the active layer is epitaxially deposited is selected to be greater than 1.1 and the active layer is deposited epitaxially. Thus, there may be obtained a highly-reliable semiconductor light-emitting device whose life time is made longer.

Method of manufacturing semiconductor light-emitting device

A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.

Luminescent semiconductor device with antidiffusion layer on active

A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Zn.sub.x Mg.sub.Y Be.sub.1-x-y S.sub.Z Se.sub.1-z (0&lt;x&lt;1,0&lt;y&lt;1,0.ltoreq.z&lt;1) system compound semiconductor, at least one active layer (5) made of Zn.sub.A Cd.sub.B Be.sub.1-A-B S.sub.c Se.sub.1-C (0&lt;A.ltoreq.1, 0.ltoreq.B&lt;1, 0.ltoreq.C&lt;1), having a compressive distortion relative to the above substrate and located between the first and second conductivity type cladding layers, and at least one strain compensation layer having a tensile distortion relative to the above substrate and made of Zn.sub.u Cd.sub.1-u S.sub.v Se.sub.1-v (0&lt;u.ltoreq.1, 0.ltoreq.v&lt;1).

Semiconductor light-emitting device

A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.

Growing community of inventors

Tokyo, Japan

Eisaku Kato