Sumitomo Electric Industries, Limited

Agency for Science, Technology and Research

Institute of Materials Research and Engineering

Eiryo Takasuka

Masaki Ueno

Toshio Ueda

Toshiyuki Kuramoto

Kyoko Okita

Takashi Sakurada

Shunsaku Ueta

Peng Chen

Sho Sasaki

Soo-Jin Chua

Hidehiko Mishima

Hirokazu Eguchi

Naoki Kaji

Katsushi Akita

Takashi Kyono

Masahiro Nakayama

Kouhei Miura

Zhen Chen

In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within &#xb1;15&#xb0; relative to a [&#x2212;1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [&#x2212;1100] direction, and where the first measurement region is irradiated with an X ray in a direction within &#xb1;6&#xb0; relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Silicon carbide single crystal substrate

Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor () is furnished with a susceptor () and a duct (). The susceptor () has a carrying surface for heating and carrying substrates (). The duct () is for conducting reaction gas (G) to the substrates (). The susceptor () is rotatable with the carrying surface fronting on the duct () interior. The duct () has channels () and (), which merge on the duct end upstream of Point A. The height of the duct () running along the reaction gas (G) flow direction monotonically diminishes heading toward the duct downstream end from Point Pto Point P, stays constant from Point Pto Point P, and monotonically diminishes heading downstream from Point P. Point Plies upstream of Point A, while Point Plies on the susceptor ().

Metalorganic chemical vapor deposition reactor

Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

Metal organic chemical vapor deposition equipment

A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Vapor-phase process apparatus, vapor-phase process method, and substrate

A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InGaN quantum well layer, an InGaN barrier layer (x&#x3e;0.3 or x=0.3), and InGaN quantum dots, where x&#x3c;y&#x3c;z&#x2266;1.

Group III nitride white light emitting diode

A GaN substrate comprises a GaN single crystal substrate, an AlGaN intermediate layer (0&#x3c;x&#x2266;1) epitaxially grown on the substrate, and an GaN epitaxial layer grown on the intermediate layer. The intermediate layer is made of AlGaN and this AlGaN grows over the entire surface of the substrate with contaminants thereon and high dislocation regions therein. Thus, the intermediate layer is normally grown on the substrate, and a growth surface of the intermediate layer can be made flat. Since the growth surface is flat, a growth surface of the GaN epitaxial layer epitaxially grown on the intermediate layer is also flat.

GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same

The GaN single-crystal substratein accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020&#xb0; C. in a mixed gas atmosphere containing at least an NHgas. As a consequence, an atomic rearrangement is effected in the surface of the substratein which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrateTherefore, the surface of an epitaxial layerformed on the substratecan be made flat.

GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same

Growing community of inventors

Itami, Japan

Eiryo Takasuka