Commissariat a L'energie Atomique Et Aux Energies Alternatives

Eirini Sarelli

Badhise Ben Bakir

Gilles Le Blevennec

The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layerof an active layerand of an extraction layerIt comprises a step of determining a distance hbetween emitting dipoles &#x3bc;that are located in the active layerand the extraction layersuch that the emitting dipoles &#x3bc;of vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.

Method for producing an extraction-layer light-emitting diode comprising a step of dimensioning a semiconductor layer

The invention relates to a method for producing a light-emitting diode, comprising a stack formed of a first semiconductor layerand of an active layera reflective electrodeextending in contact with the first semiconductor layercomprising a step of determining a distance between emitting dipoles that are located in the active layerand the reflective electrodefor which a lifetime of the emitting dipoles having a chosen orientation is longer than that of the emitting dipoles having the non-chosen orientation.

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Grenoble, France

Eirini Sarelli