Intel Corporation

Eirc A Karl

Charles Henry Wallace

Mauro J Kobrinsky

Leonard P Guler

Shem Ogadhoh

Zheng Guo

Clifford L Ong

Smita Shridharan

Clifford J Engel

Embodiments described herein may be related to apparatuses, processes, systems, and techniques directed to electrical couplings between epitaxial structures and voltage sources within transistors in SRAM bit cells. Embodiments include direct electrical couplings between a backside contact metal (BM0) and a backside of an epitaxial structure to provide SRAM VCC voltage (SVCC) voltage, as well as electrical connection structures that electrically couple the BM0 to a front side of an epitaxial structure to provide SVCC voltage. Other embodiments may be described and/or claimed.

Backside electrical contact for PMOS epitaxial voltage supply

Growing community of inventors

Portland, OR, United States of America

Eirc A Karl