Applied Materials Israel Limited

Yeda Research and Develpment & Co. Ltd

Einat Frishman

Roman Kris

Rafael Bistritzer

Grigory Klebanov

Ilan Ben-Harush

Elad Sommer

Sharon Duvdevani-Bar

Sahar Levin

Jannelle Anna Geva

Chih-Chieh Chang

Vadim Vereschagin

Dhananjay Singh Rathore

Paul Brumer

Moshe Shapiro

Assaf Shamir

Gal Daniel Gutterman

Daniel Alan Rogers

Noa Marom

Jitendra Pradipkumar Chaudhary

Ido Friedler

Ran Alkoken

Avi Aviad Ben Simhon

Arundeepth Thamarassery

Tal Orenstein

Meir Vengrover

There is provided a system and a method comprising obtaining data Dinformative of a contour of an element of a semiconductor specimen acquired by an examination tool, using the data Dto generate a signal informative of a curvature of the contour of the element, determining at least one of data Dinformative of a periodicity of the signal, or data Dinformative of a number of discontinuities in the signal, wherein each discontinuity is informative of a transition between a convex portion of the contour and a concave portion of the contour, and using at least one of the data Dor the data Dto determine data informative of correct manufacturing of the element.

Control of a manufacturing process using contour curvature analysis of specimens

There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.

Local shape deviation in a semiconductor specimen

There is provided a system and method of performing a measurement with respect to an epitaxy formed in a finFET, the epitaxy being separated with at least one adjacent epitaxy by at least one HK fin. The method comprises obtaining an image of the epitaxy and the at least one HK fin, and a gray level (GL) profile indicative of GL distribution of the image; detecting edges of the at least one HK fin; determining two inflection points of the GL profile within an area of interest in the image; performing a critical dimension (CD) measurement between the two inflection points; determining whether to apply correction to the CD measurement based on a GL ratio indicative of a relative position between the epitaxy and the at least one HK fin; and applying correction to the CD measurement upon the GL ratio meeting a predetermined criterion.

Epitaxy metrology in fin field effect transistors

There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.

Generating a metrology recipe usable for examination of a semiconductor specimen

An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.

Evaluating a hole formed in an intermediate product

A laser-based method of enhancing the enantiomeric excess of one chiral enantiomer in a mixture of chiral enantiomers, denoted L and D (and related to one another by the inversion operation I), is described. The molecule L and D is chosen so that electronic excitation is to an electronically excited species with stationary ro-vibrational states which are individually either symmetric or anit-symmetric with respect to I. The mixture is irradiated with a series of achiral pulses of coherent laser light. By varying the frequencies, timing, and durations of these pulses one can selectively increase the enantiomeric excess of either L or D in the ground electronic state.

Coherently controlled laser distillation of chiral enantiomers

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Rehovot, Israel

Einat Frishman