Seagate Technology Incorporated

Seagate Technologies, Inc.

Eileen Yan

Haiwen Xi

Insik Jin

Zheng Gao

Kaizhong Gao

Dimitar Velikov Dimitrov

Song Sheng Xue

Shaoping Li

Xiaobin Wang

Hongyue Liu

Andreas Karl Roelofs

Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

Magnetic field assisted stram cells

Magnetic field assisted STRAM cells

A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

Structures for resistive random access memory cells

Growing community of inventors

Edina, MN, United States of America

Eileen Yan