Raytheon Company

Eileen M Herrin

John L Vampola

Mary J Hewitt

Leonard P Chen

Howard T Chang

A time delay integration circuit in which a number of unit cell inputs ( ) along with their respective switches ( ) are input to a bi-directional BBD circuit ( ). The BBD circuit performs an SCA TDI with reduced ROIC circuitry and compatibility with standard LSI processing. The bi-directional BBD circuit has numerous pairs of MOSFETs ( ) connected in series and numerous storage capacitors ( ) having one of their terminals respectively connected between each of the MOSFET pairs and the other of their terminals alternately connected to clock phases &Oslash; and &Oslash; . The gates of the MOSFETs in each pair are separated from the clock phases &Oslash; and &Oslash; and function respectively as screen gate and transfer clock for one direction of charge flow, and as transfer clock and screen gate for the other direction of charge flow. Transfer direction is changed by switching which MOSFET in a pair becomes clocked as a transfer gate and which becomes a screen gate.

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Goleta, CA, United States of America

Eileen M Herrin