Hitachi, Ltd.

Nippon Hoso' Kyokai

Eikyuu Hiruma

Keiichi Shidara

Kazutaka Tsuji

Tadaaki Hirai

Yukio Takasaki

Tatsuo Makishima

Takashi Yamashita

Kenkichi Tanioka

Eisuke Inoue

Tatsuro Kawamura

Junichi Yamazaki

Sachio Ishioka

Yasuhiko Nonaka

Naohiro Goto

Kenji Sameshima

Masaaki Aiba

Mitsuo Kosugi

Masanao Yamamoto

Kazuhisa Taketoshi

Tsuyoshi Uda

Hirofumi Ogawa

Shiro Suzuki

Yochizumi Ikeda

Yasuharu Shimomoto

Hirokazu Matsubara

Shirou Suzuki

A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Photoconductive device and method of operating the same

A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

Target of image pickup tube having an amorphous semiconductor laminate

A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

Target of image pickup tube

An image pick-up tube target comprising an N-type conductive film formed on a transparent substrate, and P-type photoconductive film in rectifying contact with the N-type conductive film and comprising a first layer containing As, fluoride and Se, a second layer containing As, Te and Se, a portion of said second layer containing fluoride, a third layer containing As and Se, the composition of the third layer being different along the direction of thickness thereof, a fourth layer containing As and Se, wherein the concentration of As in the second layer varies continuously along the direction of thickness thereof, and in the second layer the minimum As concentration is located on the first layer side of the second layer and the maximum As concentration is located on the third layer side of the second layer.

Image pick-up tube target

Growing community of inventors

Komae, Japan

Eikyuu Hiruma