Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Eiko Hayashi

Masahiro Sugimoto

Masahito Kodama

The invention provides a method for producing a group III nitride based semiconductor having a reduced number of crystal defects. A GaN layeris epitaxially grown on a sapphire substratehaving C-plane as a main plane (FIG.A). Then, the layer is wet-etched by use of a 25% aqueous TMAH solution at 85&#xb0; C. for one hour, to thereby form an etch pit(FIG.B). Then, a GaN layeris grown on the GaN layerthrough the ELO method (FIG.C). The thus-formed GaN layerhas a screw dislocation density lower than that of the GaN layer

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Aichi-ken, Japan

Eiko Hayashi