Infineon Technologies Ag

Eike Lüken

Andreas Hilliger

Ralf Staub

The invention relates to a method for producing an integrated circuit comprising the following steps: preparing a semi-conductor substrate () with a contacting circuit area (SS); providing an insulating layer (IS) on the surface of the semi-conductor substrate (): providing a contact hole (KL) in the insulating layer (IS) for making contacting the circuit area (SS); providing an insulating spacer area (') in at least the area above the contact hole (KL); providing at least three trenches (BG; BG; BG), the first (BG) of which is arranged next to the contact hole (KL), a second (BG) is disposed across the contact hole (KL) and a third (BG) is next to the contact hole (KL). The spacer area (&#x2032;) is placed between the first and the second trench (BG; BG) and the second and the third trench (BG; BG); filling the trenches (BG; BG; BG) with a conductive material; and chemical-mechanical polishing of conductive material for producing three separated trenches (BL; BL; BL).

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Holzkirchen, Germany

Eike Lüken