Jsr Corporation

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Epfl Ecole Polytechnique Fédérale De Lausanne

Eiji Yoneda

Kentaro Matsunaga

Tomoki Nagai

Tsutomu Shimokawa

Yong Wang

Hiroshi Ikeda

Yukio Nishimura

Makoto Shimizu

Makoto Sugiura

Takanori Kawakami

Takuma Ebata

Tatsuya Toneri

Eiichi Kobayashi

Isao Nishimura

Nobuhiro Komine

Hiromitsu Nakashima

Satoshi Nagai

Yumi Nakajima

Takashi Chiba

Haruo Iwasawa

Tomohiro Utaka

Satoshi Ebata

Kouichi Fujiwara

Koutarou Sho

Fumihisa Miyajima

Sonoe Nakaoka

Kenichi Yokoyama

Masashi Terao

Michael Grätzel

According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and openings different in depth surrounded by the stacked body and separated from each other.

Manufacturing method for a semiconductor device including resist films different in thickness

According to one embodiment, first a guide pattern is formed above an object to processing, and then surface modification is performed on the guide pattern. Then a solution including a block copolymer is coated over the object to processing having the guide pattern formed thereon, and the block copolymer is made to phase separate over the object to processing. Subsequently, one component of the phase-separated block copolymer is removed by development. And with the guide pattern coated with other component of the block copolymer as a mask, the object to processing is patterned.

Pattern forming method

According to an embodiment, a guide pattern having a first opening pattern and a second opening pattern shallower than the first opening pattern, is formed on a film to be processed. A directed self-assembly material is set into the first and second opening patterns. The directed self-assembly material is phase-separated into first and second phases in the first and second opening patterns. A third opening pattern is formed by removing the first phase. The third opening pattern in the second opening pattern is eliminated, and the second and third opening patterns are transferred to the film to be processed, by one etching to be processed from the tops of the second and third opening patterns.

Pattern formation method

A radiation-sensitive resin composition comprising an acid-labile group-containing resin obtained by living radical polymerization having a specific structure which is insoluble or scarcely soluble in alkali, but becomes alkali soluble by the action of an acid, and a photoacid generator, wherein the ratio of weight average molecular weight to number average molecular weight (weight average molecular weight/number average molecular weight) of the acid-labile group-containing resin is smaller than 1.5.

Radiation-sensitive resin composition

According one embodiment, a pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, includes: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region, the curing of the first resist layer being suppressed.

Pattern formation method and pattern formation apparatus

A semiconductor manufacturing apparatus according to the present embodiment includes a vacuum chamber. A stage mounts a semiconductor substrate thereon within the vacuum chamber. An electrostatic chuck fixes the semiconductor substrate onto the stage. A sensor detects a height of a surface of the semiconductor substrate fixed onto the stage by the electrostatic chuck. A processor determines whether the surface of the semiconductor substrate is distorted based on the height of the surface of the semiconductor substrate. The processor calculates correction values for a pattern transferred onto the surface of the semiconductor substrate by exposure based on the height of the surface of the semiconductor substrate when the surface of the semiconductor substrate is distorted. An exposure part exposes the surface of the semiconductor substrate to light using the correction values.

Semiconductor manufacturing apparatus and device manufacturing method using substrate distortion correction

A radiation-sensitive resin composition excelling in basic properties as a resist such as sensitivity, resolution, and the like, having a wide depth of focus (DOF) to both a line-and-space pattern and an isolated space pattern, and exhibiting a minimal line width change due to fluctuation of a bake temperature, and having a small line width limit in which the line pattern destroying phenomenon does not occur, and a lactone-containing copolymer useful as a resin component of the composition are provided. The lactone-containing copolymer is represented by a copolymer of the following compounds (1-1), (2-1), and (3-1).  The radiation-sensitive resin composition comprises (a) the lactone-containing copolymer and (b) a photoacid generator.

Lactone copolymer and radiation-sensitive resin composition

A compound is shown by the following formula (5) in which at least one of Rgroups represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A' represents a substituted or unsubstituted, linear or branched alkylene group having 1 to 20 carbon atoms, an alkylene group having at least one hetero atom, or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, Mrepresents an onium cation, m represents a natural number of 1 to 3, and p represents a natural number of 1 to 8. 

Sulfonium compound

A radiation-sensitive resin composition is provided which has high transparency to radiation, excelling in basic properties as a resist such as sensitivity, resolution, and pattern shape, and, in particular, a high resolution radiation-sensitive resin composition providing a wide DOF and excelling in LER. Also provided are a polymer which can be used in the composition and a novel compound useful for synthesizing the polymer. The novel compound is shown by the following formula (2), wherein Rrepresents a methyl group, a trifluoromethyl group, or a hydrogen atom, at least one of the Rs represents a fluorine atom or a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, A represents a divalent organic group or a single bond, G represents a divalent organic group having a fluorine atom or a single bond, Mrepresents a metal ion or an onium cation, m represents an integer of 1 to 3, and p is an integer of 1 to 8.

Compound, polymer, and radiation-sensitive composition

A positive tone radiation-sensitive resin composition comprising (A) a 1-substituted imidazole, (B) a photoacid generator, and (C-a) a resin protected by an acid-dissociable group, insoluble or scarcely soluble in alkali, but becoming soluble in alkali when the acid-dissociable group dissociates or (C-b) an alkali-soluble resin and an alkali solubility controller, and a negative tone radiation-sensitive resin composition comprising (A), (B), (D) an alkali-soluble resin, and (E) a compound that can crosslink the alkali-soluble resin in the presence of an acid. The radiation-sensitive resin composition of the present invention is a chemically amplified resist exhibiting high resolution and high storage stability as a composition, and suitable for microfabrication sensible to active radiations, for example, ultraviolet rays such as g-lines and i-lines, deep ultraviolet rays represented by a KrF excimer laser, ArF excimer laser, Fexcimer laser, and EUV excimer laser, and electron beams.

An onium salt compound having a cation moiety of the following formula (1) is disclosed. wherein A represents I or S, m is 1 or 2, n is 0 or 1, x is 1&#x2013;10, and Ar1 and Ar2 are (substituted) aromatic hydrocarbon group, and P represents &#x2014;O&#x2014;SOR, &#x2014;O&#x2014;S(O)R, or &#x2014;SOR, wherein R represents a hydrogen atom, a (substituted) alkyl group, or a (substituted) alicyclic hydrocarbon group. The onium salt compound is suitable as a photoacid generator for photoresists of a positive-tone radiation-sensitive resin composition. The positive-tone radiation-sensitive resin composition containing this compound is useful as a chemically-amplified photoresist exhibiting high resolution at high sensitivity, responsive to various radiations, and having outstanding storage stability.

Onium salt compound and radiation-sensitive resin composition

A novel photoacid generator containing a structure of the following formula (I),wherein R is a monovalent organic group with a fluorine content of 50 wt % or less, a nitro group, a cyano group, or a hydrogen atom, and Zand Zare individually a fluorine atom or a linear or branched perfluoroalkyl group having 1-10 carbon atoms, is provided. When used in a chemically amplified radiation-sensitive resin composition, the photoacid generator exhibits high transparency, comparatively high combustibility, and no bioaccumulation, and produces an acid exhibiting high acidity, high boiling point, moderately short diffusion length in the resist coating, and low dependency to mask pattern density.

Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition

Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same

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Tokyo, Japan

Eiji Yoneda