Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Research Laboratories, Inc.

Eiji Yagyu

Eitaro Ishimura

Masaharu Nakaji

Satoshi Nishikawa

Bingnan Wang

Keisuke Kojima

Toshiaki Koike-Akino

Kunihiko Nishimura

Shuichi Hiza

Koichi Akiyama

Nobuyuki Tomita

Masahiro Fujikawa

Yuki Takiguchi

Keisuke Nakamura

Tateki Mitani

Muneyoshi Suita

Akifumi Imai

Koji Yoshitsugu

Toshiyuki Tanaka

Hiroyuki Okazaki

Tetsuya Nishimura

Masakazu Takabayashi

Shusaku Hayashi

Motomu Yoshimura

Kentaro Enoki

Kiichi Yoshiara

Takuma Nanjo

Kenichiro Kurahashi

Tomohiro Shinagawa

Yasuhisa Shimakura

Yutaro Hamatani

Tsuyoshi Yoshida

Masahiro Yoshida

Yosuke Suzuki

Shigeki Kanamaru

Tatsuro Watahiki

Kosuke Shinohara

Hisashi Saito

Kiyotomo Hasegawa

Ken Imamura

Hiroaki Shintaku

Shinya Nishimura

Noriaki Tsukada

Marika Nakamura

Wangqing Yuan

Yutarou Hamatani

Selman Ozbayat

Manuela Felicetti

Shigeyoshi Usami

Takashi Matsuda

A semiconductor device includes a first substrate, a semiconductor layer consisting of a nitride-based compound semiconductor, and a bonding layer bonded to the first substrate and the semiconductor layer between the first substrate and the semiconductor layer, and containing at least one of constituent elements of the nitride-based compound semiconductor.

Semiconductor device and method of manufacturing semiconductor device

A split in a dicing street in a semiconductor film is prevented. A semiconductor device includes: a first dicing street passing between a plurality of element regions on which a plurality of protective films are formed one-to-one, the first dicing street extending along a first axis; a second dicing street passing between the plurality of element regions and extending along a second axis; and a stop island disposed on the upper surface of the semiconductor film at an intersection between the first dicing street and the second dicing street, the stop island being in non-contact with the plurality of element regions. X_si>X_ds and Y_si<Y_ds are satisfied.

Semiconductor device including stop islands and method for manufacturing semiconductor device

A nitride semiconductor device includes: a diamond substrate; a first graphene layer provided on the diamond substrate; a second graphene layer provided on the first graphene layer; a nitride semiconductor layer provided on the second graphene layer; and a nitride semiconductor element having an electrode provided on the nitride semiconductor layer, wherein the first and second graphene layers are provided as an interface layer between the diamond substrate and the nitride semiconductor layer.

Nitride semiconductor device, and method of manufacturing nitride semiconductor device

A semiconductor device includes a nitride semiconductor laminated structure formed on a substrate, a source electrode formed on the nitride semiconductor laminated structure, a drain electrode and a gate electrode, and a surface protection film covering the nitride semiconductor laminated structure. the nitride semiconductor laminated structure includes: a first nitride semiconductor layer formed on the substrate; and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a composition different from the first nitride semiconductor layer. The surface protection film includes: a first insulating film formed to have contact with the gate electrode; and a second insulating film formed adjacent to the first insulating film and having a higher carbon concentration than the first insulating film.

Semiconductor device, and method of manufacturing semiconductor device

It is an object of the present disclosure to provide a method of manufacturing a thin semiconductor element having a low defect rate. A method of manufacturing a semiconductor element according to the present disclosure includes: forming a metal thin film on an electrode protection layer of a circuit element substrate and a support substrate in vacuum; attaching the metal thin film of the circuit element substrate and the metal thin film of the support substrate by an atomic diffusion joining method; removing a semiconductor substrate by polishing to expose a circuit element; joining a transfer substrate to an exposed surface of the circuit element; and detaching the support substrate from the circuit element after joining the transfer substrate.

Method of manufacturing semiconductor element

A first nitride semiconductor layer and a second nitride semiconductor layer are laminated in a first direction. The first and second nitride semiconductor layers form a heterojunction, and a two-dimensional carrier gas is induced in the first nitride semiconductor layer. A drain electrode is opposite to a source electrode via gate electrode in a third direction. The source electrode and the drain electrode conduct with the first nitride semiconductor layer. The first and second nitride semiconductor layers form a Schottky junction with the gate electrode. A first layer is located between the gate electrode and the drain electrode in the third direction and is in contact with the gate electrode, and is in contact with the second nitride semiconductor layer in a second direction. The first layer suppresses induction of the two-dimensional carrier gas in the first nitride semiconductor layer opposite to the first layer in the first direction.

Semiconductor device

Removal of substrates in a composite substrate is facilitated, and flaking of the composite substrate in an unintended process is prevented. A method for manufacturing a composite substrate includes: forming a first bonding material in a first surface of a first substrate; forming, in the first surface, at least one groove located more inward than a periphery in a plan view of the first substrate; forming the first bonding material along an inner wall of the at least one groove, the first bonding material not filling into space enclosed by the inner wall of the at least one groove; forming a second bonding material on a second surface of a second substrate; and bonding the first bonding material and the second bonding material together in a region except the at least one groove.

Method for manufacturing composite substrate, and composite substrate

The present invention relates to a method for manufacturing a semiconductor substrate, including: (a) preparing an epitaxial substrate having a nitride semiconductor layer formed on a first main surface of a growth substrate and preparing a first support substrate, forming a resin adhesive layer between the first main surface of the growth substrate and a first main surface of the first support substrate, and bonding the epitaxial substrate to the first support substrate; (b) thinning a second main surface of the growth substrate; (c) forming a first protective thin film layer on the thinned growth substrate; (d) forming a second protective thin film layer on the first support substrate; (e) removing the thinned growth substrate; (f) bonding a second support substrate onto the nitride semiconductor layer; and (g) removing the first support substrate and the resin adhesive layer.

Method for manufacturing a semiconductor substrate and device by bonding an epitaxial substrate to a first support substrate, forming a first and second protective thin film layer, and exposing and bonding a nitride semiconductor layer to a second support substrate

An object is to provide a technique capable of suppressing defectives in semiconductor elements. A manufacturing method of a semiconductor device includes a step of forming a laminated body in which an adhesive protective layer, an adhesive layer, a peeling layer, and a support substrate are disposed in this order on a first main surface of the semiconductor substrate, a step of removing the semiconductor substrate other than a portion where a plurality of circuit elements are formed, a step of bonding the portion where the circuit elements are formed to a transfer substrate, a step of removing the peeling layer, the support substrate and the adhesive layer, a step of removing the adhesive protective layer by chemical treatment, and a step of dividing the plurality of circuit elements.

A semiconductor device includes a diamond substrate made of diamond, and a nitride semiconductor layer formed in a recess formed at an upper surface of the diamond substrate. The semiconductor device further includes at least one of: (A) the nitride semiconductor layer formed to be surrounded entirely by the upper surface of the diamond substrate in a plan view; (B) the diamond substrate in which the upper surface of the diamond substrate and an upper surface of the nitride semiconductor layer are located on the same plane; and (C) the diamond substrate having electrical insulating properties.

Semiconductor device including a diamond substrate and method of manufacturing the semiconductor device

The semiconductor manufacturing device includes: a lower substrate support base configured to support a diamond substrate; an upper substrate support base configured to support a semiconductor substrate; a support base drive unit configured to move the lower substrate support base and the upper substrate support base to bring the diamond substrate and the semiconductor substrate into close contact with each other under a state in which a pressure is applied to the diamond substrate and the semiconductor substrate in a thickness direction; and a second mechanism configured to deform a surface of the upper substrate support base opposed to the lower substrate support base so that a surface of the semiconductor substrate opposed to the diamond substrate forms a parallel surface or a parallel plane with respect to a surface of the diamond substrate opposed to the semiconductor substrate.

Semiconductor manufacturing method and semiconductor manufacturing device

An optical waveguide interferometer that includes a first optical section, a second optical section, and a set of optical waveguides configured to connect the first and second optical sections, such that light propagating between the first optical section and the second optical section passes through each optical waveguide in the set, wherein the set of optical waveguides includes a first optical waveguide having a first length and a first width and a second optical waveguide having a second length and a second width, wherein the second length is greater than the first length, and the second width is greater than the first width.

Optical waveguide interferometer

A superposition circuitry superposes a dither signal on a reference DC bias voltage and outputs a resultant voltage as a bias voltage to an MZ modulator, during control of a driving voltage amplitude. During the control of the driving voltage amplitude to the MZ modulator, an amplitude setter determines, by varying the amplitude of an output voltage from an amplifier, a plurality of amplitudes of output curves from a synchronous detector, each of which is obtained by varying the reference DC bias voltage output from a bias controller, and the amplitude setter sets the amplification factor of the amplifier, based on an amplitude of the output voltage from the amplifier that corresponds to an amplitude satisfying a predetermined condition, out of the plurality of the amplitudes of the output curves from the synchronous detector.

Optical modulation device and method for controlling optical modulation device

An optical modulator having a small-sized circuit and a smaller voltage drop in a terminating resistor is provided. The optical modulator includes first and second optical waveguides, a first electrode inputting a first high frequency signal into the first optical waveguide, a second electrode inputting a second high frequency signal having a reverse phase relative to the first high frequency signal into the second optical waveguide, a first terminating resistor connected to the first electrode, a second terminating resistor connected to the second electrode, a connection point connecting the first and second electrodes via the first and second terminating resistors, and a DC voltage supply connected to the connection point. A resistance value of the first terminating resistor is equal to a characteristic impedance of the first electrode. A resistance value of the second terminating resistor is equal to a characteristic impedance of the second electrode.

Optical modulator

An optical transmitter includes: a splitter; a first optical modulator and a second optical modulator that modulate each of light beams split by the splitter; a first semiconductor optical amplifier (SOA) and a second SOA that are connected to a subsequent stage of the first optical modulator and a subsequent stage of the second optical modulator, respectively; a first detector and a second detector that detect light output intensity of the first SOA and light output intensity of the second SOA, respectively; a controller that sets gains of the first and second SOAs such that the first and second SOAs are equal in the light output intensity based on detection values of the first and second detectors; and a combiner that combines an output light beam of the first SOA and an output light beam of the second SOA.

Optical transmitter

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Tokyo, Japan

Eiji Yagyu