Hitachi, Ltd.

Eiji Wakimoto

Hideo Miura

Hiroo Masuda

Jun Murata

Noriaki Okamoto

Makoto Ogasawara

Shinji Sakata

Yasunobu Tanizaki

A semiconductor device includes a thermal oxide film for isolation, a semiconductor region that becomes an element forming region with the circumference thereof surrounded by the oxide film and diffused resistance layers in the semiconductor region and provides a structure for controlling resistance value variation of diffused resistors originated in a stress generated at time of forming the oxide film for isolation. A distance between an end portion on a longer side closest to a thermal oxide film of the diffused layer and an end of the thermal oxide film is apart from each other by a predetermined value determined by stress distribution in the semiconductor region or by at least 4 .mu.m or more, the longitudinal direction of the diffused layer portion formed from the end of the thermal oxide film over to a stress distribution (gradient) forming region in the semiconductor region is parallel to the forming direction of the stress gradient, and resistance value distribution is formed parallel to the stress gradient in the diffused layer formed from the end of the thermal oxide film over to the stress distribution forming region in the semiconductor region.

Semiconductor device having circuit element in stress gradient region by

Growing community of inventors

Takasaki, Japan

Eiji Wakimoto