Honda Giken Kogyo Kabushiki Kaisha

Tdk Corporation

Tokyo Electron Limited

Konami Digital Entertainment Co., Ltd.

Lintec Corporation

Fuji Photo Film Company, Limited

Fujifilm Corporation

Fuji Xerox Co., Ltd.

Taica Corporation

Suzuki Sogyo Co., Ltd.

Konami Corporation

Iwatsu Electric Company Ltd.

Railway Technical Research Institute

Cubic Co., Ltd

Toho Kogyo Co., Ltd.

Eiji Suzuki

Hideaki Okabe

Katsuyuki Nakada

Hiroto Ohtake

Yoshimichi Tsubata

Akinori Kitamura

Eiji Ohyama

Tsuyoshi Suzuki

Shogo Yonemura

Yoichiro Inaba

Tatsuya Kobayashi

Kenichi Kitayama

Masayuki Kubota

Akira Wakabayashi

Takanori Saito

Yukiya Shimizu

Tomoyuki Kanda

Katsutoshi Ando

Youichiro Yoshii

Hajime Matsumaru

Toshiya Nishino

Tomiko Kamada

Hidenori Kanno

Sakae Ushiwata

Takashi Yano

Masatoshi Kimura

Yoji Okazaki

Shinichiro Sonoda

Kaushik Arun Kumar

Kazuhiko Nagano

Andrew W Metz

Tomoaki Ishikawa

Toshihiko Suenaga

Masaaki Yamaguchi

Masayuki Kohno

Ryo Kitano

Atsushi Fujikawa

Teruhiko Kuramachi

Satoshi Mino

Toru Nagai

Tadakatsu Izumi

Ippei Kondo

Masashi Endo

Daihei Teshima

Naoki Uchiyama

Kozo Kusumoto

Yusuke Takino

Masao Kogure

Tadaaki Tsunashima

Nobuyuki Otaki

Hiroshi Yoshida

Shota Yoshimura

Keiichi Hanyu

Yutaka Yamaguchi

Kaoru Nemoto

Katsuyuki Narai

Tomomi Kiyotaki

Yuji Otsuka

Teruo Akema

Yusuke Ohsawa

Kimio Ochiai

Sadaaki Fukumura

Masaru Hoshi

Akio Fujinaka

Yasunori Komatsu

Akio Kabuto

Kazutoshi Sugai

Rui Saito

Takashi Yoshida

Yutaka Osada

Makoto Suzuki

Akinori Tanno

Shuji Kuroda

Hiroyuki Kita

Naoki Uchimaya

Mikio Shouji

Yusaku Sugiura

Akihiko Kishikawa

Hiroki Kamijo

Atsushi Mizutani

Iskander Umarov

Katsumi Iyanagi

Yasunori Yoshimura

Yoshihiro Ichimura

Yutaka Kadota

An information processing device includes a transmission terminal configured to transmit an input signal and a plurality of reception terminals configured to receive information output from the transmission terminal as a signal. A signal received by one of the plurality of reception terminals is configured to be able to interact with signals received by the other reception terminals.

Information processing device and operation detection device

A laminated structure includes a ferromagnetic layer, a multiferroic layer provided on one surface of the ferromagnetic layer, and a ferroelectric layer which is provided on the multiferroic layer opposite to the ferromagnetic layer and has a permittivity greater than that of the multiferroic layer.

Laminated structure and spin modulation element

The endoscope includes an imaging device that is provided in a tip portion of an insertion part capable of being inserted into a body cavity. The imaging device includes an image sensor that photoelectrically converts imaging light incident on an image receiving surface thereof through an imaging lens provided in a lens barrel, and a circuit substrate including a connecting surface facing a terminal face that is a surface opposite to the image receiving surface of the image sensor. A plurality of terminals are uniformly arranged longitudinally and laterally in a two-dimensional matrix form on the terminal face of the image sensor, and the connecting surface of the circuit substrate and the terminal face of the image sensor are connected to each other through the plurality of terminals. The total area of the plurality of terminals on the terminal face occupies 10% or more of the area of an imaging area of the image receiving surface.

Endoscope

A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein a surface of the multiferroic layer on the ferromagnetic layer side includes a first region, a crystalline phase of which is rhombohedral, and a second region, a crystalline phase of which is tetragonal.

A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein the multiferroic layer includes a first region having a tetragonal crystal located on a surface side on the ferromagnetic layer side and a second region having a rhombohedral crystal located further inside than the first region.

To provide a laminated structure and a spin modulation element capable of stably modulating spin polarizability of a ferromagnetic material by an electric field. A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein the multiferroic layer includes a first region having a rhombohedral crystal structure formed on a surface side on the ferromagnetic layer side and a second region having a tetragonal crystal structure formed further inside than the first region.

Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container.

Method for etching silicon layer and plasma processing apparatus

First control means of a simulation device simulates motions of a plurality of virtual players that are placed in a virtual world and other than an operation target of a user. Determining means determines whether a situation of a game being simulated in the virtual world is similar to a situation indicated in data. In a case where it is determined that the situation of the game in the virtual world is similar to the situation indicated in the data, second control means controls, in place of the first control means, the virtual players other than the operation target of the user based on a motion associated with the situation.

Simulation device, simulation method, program, and information storage medium

A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density Jfor oscillation, to a magnetoresistive effect element for a time T, and then executes a second step of applying a current, which has a second current density Jsmaller than the first current density and not smaller than the critical current density Jfor oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time Tin the first step is J, a critical current density for magnetization reversal of the magnetoresistive effect element is J, and a magnetization reversal time of the magnetoresistive effect element is T: 

Magnetoresistive effect oscillator

Disclosed are an activation method and a liquid pressure transfer technique, where a transfer film is supplied to the surface of a transfer liquid and then is activated, capable of continuously performing a precise transfer. In forming an appropriate transfer pattern on the surface of an object by pressing the object from the upper side of a transfer tank, in the transfer tank, a pre-activation guide mechanism that holds both sides of the film, which is supplied with the center position matching the center of the transfer tank, at horizontally equivalent positions of the transfer tank and guides the film to an activation area is disposed. Accordingly, the film is urged to swell up in the thickness direction, and, in the activation area, the film is coated with an activating agent in a state in which the guide action of the film using the pre-activation guide mechanism is cancelled.

Method for liquid surface activation of transfer film, hydrographic method and hydrographic device implementing same

A magnetoresistive effect oscillator is provided which can realize a rise or a fall of oscillation at a higher speed. In the magnetoresistive effect oscillator, at the rise, a current having a first current density, which is larger than a critical current density for oscillation, is applied, and thereafter a current having a second current density, which is less than the current density corresponding to the first current density and not less than the critical current density for oscillation, is applied such that the magnetoresistive effect element oscillates at a predetermined frequency. In the magnetoresistive effect oscillator, at the fall, starting from the state where a first current density is applied to hold the magnetoresistive effect element in an oscillating condition, a current having a second current density and having polarity reversed to that of the first current density is applied such that the oscillation disappears.

Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region.

Method of selectively removing a region formed of silicon oxide and plasma processing apparatus

An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave.

Plasma etching method

In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated.

Multilayer film etching method and plasma processing apparatus

Growing community of inventors

Tokyo, Japan

Eiji Suzuki