Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Eiji Shibata

Kazunori Inoue

Yuichi Masutani

Nobuaki Ishiga

Yasuyoshi Itoh

Kenichi Miyamoto

Toshio Araki

Takuji Oda

Hiroyasu Itoh

Kazuaki Tanoue

Fumihiro Gotoh

Masanao Nabeshima

Terushige Hino

In a method of manufacturing a TFT substrate in accordance with an exemplary aspect of the present invention, an intrinsic semiconductor film, an impurity semiconductor film, and a conductive film for source lines are formed in succession, and a resist having a thin-film portion and a thick-film portions is formed on the conductive film for source lines. Then, etching is performed by using the resist as a mask, and after that, a part of the conductive film for source lines is exposed by removing the thin-film portion of the resist. Next, the exposed conductive film for source lines is etched by using the thick-film portions of the resist a mask, so that the impurity semiconductor film is exposed. Then, by etching the exposed impurity semiconductor film, a back channel region of a TFTis formed. Further, a dummy back channel region, which is irrelevant to the operation of the finished product, is also formed in a portion other than the TFTregion.

Method of manufacturing TFT substrate and TFT substrate

A method of manufacturing displays, includes at least forming a metal pattern on a surface of an insulating substrate, forming an insulating film on the metal pattern, forming a pattern of a photosensitive resin on the insulating film, and forming a contact hole in the insulating film with the film of a photosensitive resin used as a mask. The forming a contact hole is a dry etching method in which an electric field is generated between a pair of opposed electrodes after an insulating substrate has been mounted on one electrode that includes aluminum in at least a surface thereof. The dry etching method includes forming a contact hole in the insulating film with an outer circumferential portion, which surrounds a region on which the insulating substrate is mounted, of the one electrode covered with an insulating material.

Method of manufacturing displays and apparatus for manufacturing displays

A method for manufacturing thin film transistor array substrate for a liquid crystal display device-includes:&#x2014;(a) forming a first metal thin film layer on a insulating substrate and forming a gate wiring and a gate electrode by a first photolithography. (b) forming a gate insulating film layer, a semiconductor film layer, an ohmic contact film layer and a second metal thin film layer, and forming the thin film transistor by a second photolithography, (c) forming an interlayer insulating film, and forming a pixel contact hole, a first contact hole and a second contact hole by a third photolithography, and (d) forming a transparent conductive film, and forming a pixel electrode by a fourth photolithography. The first metal thin film has a two-layered structure comprising a first layer made of aluminum or aluminum alloy and a second layer located on said first layer, and the second metal thin film is formed of an alloy mainly containing molybdenum.

Method for manufacturing a thin film transistor array substrate for a liquid crystal display device

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Kumamoto, Japan

Eiji Shibata