Seiko Epson Corporation

Youtec Co., Ltd.

Eiji Natori

Takeshi Kijima

Kazumasa Hasegawa

Yasuaki Hamada

Yuzo Tasaki

Koichi Furuyama

Hiromu Miyazawa

Koji Ohashi

Koichi Oguchi

Tatsuya Shimoda

Junichi Karasawa

Takao Nishikawa

Mitsuhiro Suzuki

Setsuya Iwashita

Takamitsu Higuchi

Hajime Nakao

Tatsuo Sawasaki

Masao Nakayama

Katsuyuki Morii

Kunihiko Matsuhashi

Taku Aoyama

Hiroaki Tamura

Tomokazu Kobayashi

Taketomi Kamikawa

Yasuhiro Nomura

Shinya Momose

To suppress deterioration in the quality of a recorded image resulting from the shape of a medium not being stable. There is provided a recording apparatus () including a shape adjusting section () which adjusts a shape of a medium (M) to a reference shape, a holding section () which holds a state of the medium (M) after being adjusted by the shape adjusting section (), and a recording section () which has a discharging section () which discharges a liquid to the medium (M) which is held by the holding section (). With the recording apparatus () having this configuration, it is possible to suppress deterioration in the quality of a recorded image resulting from the shape of the medium (M) not being stable.

Recording apparatus and recording method

A flow path unit includes a pressure chamber substrate in which a plurality of pressure chambers are arranged in a first direction; and a piezoelectric element that changes a volume of the pressure chamber, in which a plane shape of an active section of the piezoelectric element is contained such that a width on one side thereof in a second direction crossing the first direction is wider than that on the other side in the second direction. The side on which the width of the active section of the piezoelectric element is great and the side on which the width thereof is smaller in the second direction be alternately disposed each other so that the active sections adjacent to each other are arranged differently from each other in the first direction.

Flow path unit and liquid ejecting apparatus equipped with flow path unit

A piezoelectric unit includes a diaphragm made of ceramics, a base portion having a pressure chamber in which the diaphragm is set to a wall and a piezoelectric element having a dielectric layer provided at the opposite side of the base portion with respect to the diaphragm. In the piezoelectric unit, the roughness of a crystal of the outermost interface at the side of the piezoelectric element of the diaphragm is further smoothened than that of a ceramics material which is included in the diaphragm more inside than the interface.

Piezoelectric unit, liquid ejecting head, liquid ejecting apparatus and method of manufacturing piezoelectric unit

A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Piezoelectric device having a ferroelectric film including a ferroelectric material

Piezoelectric device having a ferroelectric film including a solid solution

Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element

A store management system has a merchandise information management apparatus which transmits merchandise information, a merchandise tag which is provided with a first display, and receives the merchandise information which is transmitted from the merchandise information management apparatus to the merchandise tag itself and displays the merchandise information, and a display apparatus for display rack which is provided with a second display, and has a function of receiving the merchandise information which is transmitted from the merchandise information management apparatus to the display apparatus itself and displaying the merchandise information, and checking the merchandise information which is displayed on the display apparatus itself and the merchandise information which is displayed on the merchandise tag by communicating with the merchandise tag.

Store management system and store management method

The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

Film forming apparatus, substrate for forming oxide thin film and production method thereof

A ferroelectric film is formed by an oxide that is described by a general formula ABNbO. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05 &#x2266;x&#x3c;1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.

Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor

A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)Oferroelectric which includes at least four-fold coordinated Sior Gein the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.

Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device

A ferroelectric film is formed by an oxide that is described by a general formula ABNbO. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05&#x2266;x&#x3c;1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.

A ferroelectric thin film formed of a highly oriented polycrystal in which 180&#xb0; domains and 90&#xb0; domains arrange at a constant angle to an applied electric field direction in a thin film plane and reversely rotate in a predetermined electric field.

Ferroelectric thin film, method of manufacturing the same, ferroelectric memory device and ferroelectric piezoelectric device

A method of manufacturing a ceramic film includes forming the ceramic film by crystallizing a ceramic raw material liquid which includes a first raw material liquid and a second raw material liquid. The first raw material liquid and the second raw material liquid are different types of liquids, the first raw material liquid is a raw material liquid for producing a ferroelectric, the second raw material liquid is a raw material liquid for producing an oxide such as an ABO-type oxide, a solvent included in the first raw material liquid and a solvent included in the second raw material liquid have different polarities, and the ceramic film is formed in a state in which the first raw material liquid and the second raw material liquid are phase separated so that first crystals formed of the first raw material liquid are intermittently formed in a surface direction of the ceramic film and second crystals formed of the second raw material liquid are formed so as to interpose between the first crystals.

Ceramic film and method of manufacturing the same, ferroelectric capacitor, semiconductor device, and other element

A piezoelectric film is provided having good piezoelectric properties. The piezoelectric film is represented by the following general formula: ABXOwherein A contains Pb; B is at least one of Zr and Ti; X is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05&#x2266;a&#x2266;0.3; and b satisfies 0.025&#x2266;b&#x2266;0.15.

Piezoelectric film, piezoelectric element, piezoelectric actuator, piezoelectric pump, ink-jet type recording head, ink-jet printer, surface-acoustic-wave element, thin-film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus

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Chino, Japan

Eiji Natori