Rohm Co., Ltd.

Nissha Printing Co., Ltd.

Nec Corporation

Eiji Nakagawa

Sachito Horiuchi

Masanori Fujisawa

Shingo Kawashima

Seiichi Yamamoto

Akira Aoki

Shuzo Okumura

Michiaki Yama

Takahiro Ota

Koji Miyamoto

Asako Sakashita

Ryohei Nagase

Kozo Matsumura

Tomohiro Matsuzaki

Masayuki Ogawa

Hiroshi Hatakeyama

A touch sensor including a plurality of first electrode films and a plurality of second electrode films which are formed on a surface of a substrate and are arranged in different directions from each other; and a manufacturing method for the same. The manufacturing method includes: a first transfer step, which uses a transfer ribbon made by at least an insulating layer and an electrode-imparting layer which are entirely sequentially stacked as a transfer layer upon an elongated release film, attaches to a substrate only a portion of the transfer layer to which heat and pressure have been applied, and by stripping the release film, transfers the transfer layer in at least the shape of a first electrode film; and a second transfer step including attaching only the portion of the transfer layer to which the heat and the pressure had been applied and stripping the release film.

Touch sensor and manufacturing method for the same, as well as transfer ribbon for touch sensor manufacturing

A semiconductor integrated circuit includes: a switching control circuit having a first transistor and a second transistor coupled to an FET, and turning on and off the FET by turning on and off each of the first transistor and the second transistor, the FET attaining an OFF state when the first transistor is in an ON state and the second transistor is in an OFF state; a bias circuit supplying the FET with a bias voltage for turning off the FET when the first transistor and the second transistor are in an OFF state; and a protection control circuit turning off the FET by turning on the first transistor and turning off the second transistor when an abnormality is detected, and turning off the first transistor and the second transistor after a lapse of a predetermined time.

Semiconductor integrated circuit driving external FET and power supply incorporating the same

A power supply apparatus connected via a bus line to another power supply apparatus includes a voltage generation circuit generating a voltage, an abnormality detection circuit detecting an abnormality of the power supply apparatus including the abnormality detection circuit and outputting an abnormality detection signal, an abnormality control circuit, and an interface circuit receiving the abnormality detection signal from the abnormality detection circuit to output the signal via the bus line to another power supply apparatus, and receiving the abnormality detection signal via the bus line from another power supply apparatus to output the signal, to the abnormality control circuit and the abnormality control circuit controlling the voltage generation circuit to stop generation of the voltage in a case where receiving the abnormality detection signal from the abnormality detection circuit or in a case where receiving the abnormality detection signal from the interface circuit.

Power supply apparatus and power supply system including the same addressing abnormality

A power drive circuit having push-pull type output transistors connected in series between power supplies. The power drive circuit comprises an idling loop for providing output transistors Q and Q with idling current based on a reference idling current which is increased or decreased in accordance with the currents flowing through the respective output transistors as detected by respective current detecting transistors Q and Q . The invention prevents unnecessary oscillations in the circuit if the output current is very large, without resorting to an oscillation preventive capacitor, thereby enabling a cost saving power drive circuit.

Method of driving power circuit and circuit therefor

A power transistor comprising a collector region formed in a semiconductor substrate, a base region formed within the collector region, and a hoop-shaped emitter region formed within the base region. The hoop-shaped emitter region divides the base region into an external section and at least one internal section surrounded by the emitter region on the substrate surface, the external and internal base sections being connected within the substrate. A base contact is formed on the surface of each internal base section surrounded by the emitter region. By this design, the electric current is more uniform within the emitter region, and safe operating area (SOA) destruction can be prevented. The invention is also directed to semiconductor integrated circuit devices using the above power transistor, and a method of forming the same.

Power transistor having large electric current capacity and semiconductor integrated circuit device using the same

A piezo electric transformer driving circuit and a cold cathode tube illuminating device comprising a series circuit including a switch circuit, a coil and a switching transistor and being connected successively in the named order between a power source line and a ground; a piezo electric transformer of which primary side electrode is connected to a juncture of the coil and the switching transistor; and a drive halting circuit which geneates a first control signal for turning OFF the switching circuit and further generates a second control signal for halting a switching operation of the switching transistor after a predetermined period from the generation of the first control signal, wherein the predetermined period is at least one turned ON interval of the switching transistor and through the switching operation of the switching transistor a high voltage is generated at a secondary side of the piezo electric transformer.

Piezoelectric transformer driving circuit and cold cathode tube

A liquid crystal back light illuminating device includes a driving circuit which receives a first value voltage at light-on starting. The device drives a voltage stepping up circuit and lights on a cold cathode tube with a stepped-up high voltage. Thereafter, it receives a second value voltage, drives the voltage stepping up circuit and continues the lighting-on of the cold cathode tube with a lower stepped-up voltage than the former stepped-up high voltage. A slowly varying voltage which is obtained by charging a capacitor with a small current is applied to the driving circuit via an amplifier and a switch circuit. When the varying output voltage comes close to the second value voltage beyond a predetermined value, the switch circuit switches to the second value voltage. Thereby, flickering of the cold cathode tube at the time of switching the light-on condition is prevented.

Liquid crystal back light illuminating device and liquid crystal display

An audio signal amplifying circuit includes a switch circuit disposed between a first power source line and a second power source line for bootstrapping, and a capacitor for bootstrapping disposed between the second power source line and a line to which an output terminal is connected. The switch circuit is controlled from ON to OFF upon receiving a muting signal, and is provided with a first switch circuit constituted by Darlington connected transistors having an NPN type transistor as the output stage thereof and a second switch circuit constituted by a PNP type transistor disposed in parallel with the NPN type transistor. The sum of the rated current values of the NPN type transistor in the first switch circuit and the rated current value of the PNP type transistor in the second switch circuit is selected to be equal to or more than the maximum supply current value for the second power source line, and the rated current of the PNP type transistor in the second switch circuit is selected to be smaller than the rated current values of the transistors in the first switch circuit.

Audio signal amplifying circuit

A semiconductor device for amplifying audio signals of the present invention comprises a preamplifier chip for amplifying small signals representing audio signals; a power amplifier chip which receives and power-amplifies the amplified audio signals from the preamplifier chip and outputs the same ; and a frame where the preamplifier chip and the power amplifier chip are mounted and which includes a heat sink area connected to a terminal for heat radiation, wherein the heat sink area is located adjacent to an area in the frame where the power amplifier chip is mounted, and the preamplifier chip, the power amplifier chip and the frame are packaged together.

Growing community of inventors

Kyoto, Japan

Eiji Nakagawa