Nippon Electric Glass Co., Ltd.

Eiji Matsuki

Yoshinari Kato

Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point &#x2212;50&#xb0; C.) is lower than an average cooling rate from the (annealing point +100&#xb0; C.) to the annealing point.

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Shiga, Japan

Eiji Matsuki