Kabushiki Kaisha Toyota Jidoshokki

Showa Denko K.k.

Kabushiki Kaisha Toyoda Jidoshokki Seisakusho

Kabushiki Kaisha Toshiba Jidoshokki

Showa Denko Kabushiki Kaisha

Eiji Kono

Katsufumi Tanaka

Kyoichi Kinoshita

Tomohei Sugiyama

Keiji Toh

Takashi Yoshida

Yuichi Furukawa

Shinobu Yamauchi

Shintaro Nakagawa

Kota Otoshi

Nobuhiro Wakabayashi

Hidehiro Kudo

Shogo Mori

Hidehito Kubo

Masahiko Kimbara

Ryoichi Hoshino

Manabu Miyoshi

Kazuhiro Maeno

Naohisa Nishino

A heat sink () for power module is capable of mounting a power device () on at least a surface of the heat sink. The heat sink includes a refrigerant passage () in which cooling medium that dissipates heat generated by the power device () flows and a corrugated fin body () arranged in the refrigerant passage (). The corrugated fin body () has crests () and troughs () that extend in the flow direction of the cooling medium, and side walls () each of which connects the corresponding one of the crests () with the adjacent one of the troughs (). Each adjacent pair of the side walls () and the corresponding one of the crests () or the corresponding one of the troughs () arranged between the adjacent side walls () form a fin (). Each of the side walls () has a louver () that operates to, at least, rotate the cooling medium flowing in the associated fin (). The heat sink () thus has a further improved heat dissipating performance.

Heat sink for power module

A cooling device includes a heat sink having a top plate, a bottom plate spaced from the top plate and fins between the top and bottom plates, a first metal member laminated to the side of the top plate that is opposite from the fins, and a first insulator laminated to the first metal member. The top plate, the bottom plate and the first metal member are each made of a clad metal that is composed of a base metal and a brazing metal, so that the fins are brazed to the top and bottom plates, the first metal member is brazed to the top plate, and the first insulator is brazed to the first metal member.

Cooling device

A heat sink for a power module able to realize a further improvement of heat radiating performance and a further improvement of a mounting property is provided. The heat sinkfor a power module has a laminating body, a first side plateand a second side plate. The laminating bodyhas plural flow path platesformed in a plate shape in which plural groovesparallel to each other are concavely arranged on a flat joining face. Each grooveis set to a parallel flow pathparallel to a front face side by laminating each flow path plateby each joining face. A portion other than each grooveof each joining faceforms a heat transfer pathto each parallel flow pathof a laminating direction. A flow-in pathand a flow-out pathare formed in the first and second side plates. The flow-in pathand the flow-out pathare joined to side facesof the laminating body, and are communicated with each parallel flow path. The flow-in pathflows a cooling medium into each parallel flow path. The flow-out pathflows the cooling medium out of each parallel flow path. A refrigerant flow path is constructed by the flow-in path, each parallel flow pathand the flow-out path

A semiconductor device is provided that may include an insulating substrate having a ceramic substrate and metal coating layers on opposite surfaces of the ceramic substrate, a semiconductor chip mounted on one surface of the insulating substrate, and a heat sink directly or indirectly fixed to the other surface of the insulating substrate and thermally connected to the semiconductor chip through the insulating substrate. The heat sink may include a housing that is made of a metal sheet and radiating fins that are fixed in the housing and made of aluminum. The metal sheet may have a coefficient of thermal expansion between those of the insulating substrate and the radiating fin.

Semiconductor device includes a ceramic substrate and heat sink

A semiconductor device includes an insulating substrate having a ceramic substrate and metal coating layers on opposite surfaces of the ceramic substrate, a semiconductor chip mounted on one surface of the insulating substrate, a heat sink directly or indirectly fixed to the other surface of the insulating substrate and thermally connected to the semiconductor chip through the insulating substrate and at least one anti-warping sheet disposed on at least one surface of the heat sink. The anti-warping sheet is made of a metal sheet having a coating layer and has coefficient of thermal expansion between those of the insulating substrate and the heat sink.

Semiconductor device having anti-warping sheet

A heat radiatorincludes an insulating substratewhose first side serves as a heat-generating-element-mounting side, and a heat sinkfixed to a second side of the insulating substrate. A metal layeris formed on the second side of the insulating substrateopposite the heat-generating-element-mounting side. A stress relaxation memberformed of a high-thermal-conduction material intervenes between the metal layerof the insulating substrateand the heat sinkand includes a plate-like bodyand a plurality of projectionsformed at intervals on one side of the plate-like body. The end faces of the projectionsof the stress relaxation memberare brazed to the metal layer, whereas the side of the plate-like bodyon which the projectionsare not formed is brazed to the heat sink. This heat radiatoris low in material cost and exhibits excellent heat radiation performance.

Heat radiator and power module

A semiconductor moduleincludes a ceramic substrate having a front surface on which a semiconductor elementis mounted and a rear surface on the opposite side of the front surface, a front metal platejoined to the front surface, a rear metal platejoined to the rear surface, and a heat sinkjoined to the rear metal plate. The rear metal plateincludes a joint surfacethat faces the heat sink. The joint surfaceincludes a joint area and a non-joint area. The non-joint area includes recesseswhich extend in the thickness direction of the rear metal plate. The joint area of the rear metal plateis in a range from 65% to 85% of the total area of the joint surfaceon the rear metal plate. As a result, excellent heat dissipating performance can be achieved while occurrence of distortion and cracking due to thermal stress is prevented.

Semiconductor module

The present invention is a process for producing a radiator member for electronic appliances, and is characterized in that, in a process for producing a radiator member for electronic appliances, the radiator member comprising a composite material in which SiC particles are dispersed in a matrix metal whose major component is Al, it comprises a filling step of filling an SiC powder into a mold, a pre-heating step of pre-heating the mold after the filling step to a pre-heating temperature which falls in a range of from a melting point or more of said matrix metal to less than a reaction initiation temperature at which a molten metal of the matrix metal and SiC particles in the SiC powder start to react, and a pouring step of pouring the molten matrix metal whose molten-metal temperature falls in a range of from the melting point or more of the matrix metal to less than the reaction initiation temperature, into the mold after the pre-heating step, and impregnating the SiC powder with the molten metal by pressurizing. When the molten-metal temperature and the pre-heating temperature are from the melting point or more of the matrix metal to less than the reaction initiator temperature, it is possible to inhibit the generation of low thermal conductive materials while securing the impregnation of the molten metal into the SiC powder.

Radiator member for electronic appliances and processes for producing the same

First, a melt of Al or a melt of an Al alloy containing Si is injected in a die filled with SiC powder and cast to form a plate member made of an Al/SiC composite. Next, an Al foil member made of an Al&#x2014;Mg-based alloy is joined with the surface of the plate member through hot pressing. As a result, part of the Al foil member enters casting blowholes on the surface of the plate member to fill the casting blowholes. In addition, an Al&#x2014;Mg-based alloy layer is formed on the surface of the plate member. Thus, a base plate having a nearly flat surface is produced.

Method of producing base plate circuit board, base plate for circuit board, and circuit board using the base plate

A mold is filled with unsintered SiC particles and a melt of Al or of an Al alloy containing Si is poured into the mold for high pressure casting. Owing to the SiC particles and Si precipitated upon casting, a low expansion material having a low thermal expansion coefficient is produced. A heat transmission path is formed by Al infiltrating spaces between the SiC particles and therefore high heat conductivity is obtained.

Method of manufacturing a low expansion material and semiconductor device using the low expansion material

A plate-shaped composite material has a first member and a second member. The first member is an expanded metal formed of a metal plate. The coefficient of linear expansion of the metal plate is less than or equal to 8&#xd7;10/degrees Celsius. The first member suppresses thermal expansion of the composite material. The coefficient of thermal conductivity of the second member is greater than or equal to 200 W/(m&#xd7;K). The second member maintains the coefficient of thermal conductivity of the composite material. This structure provides a reliable coefficient of thermal conductivity and high strength. The structure is suitable for a cooling substrate on which electronic elements such as semiconductors are mounted.

Composite structural material, and method of producing the same

A low-expansion unit includes a plate member and an iron-nickel layer. Upper and lower surface layers of the plate member each have the iron-nickel layer thereon and/or therein. While the plate member has a relatively large thermal expansion coefficient, the iron-nickel layers, which are formed on and/or in the upper and lower surface layers of the plate member, have a relatively small thermal expansion coefficient. Therefore, thermal expansion coefficient of the low-expansion unit is as a whole restrained to a relatively small value. Also, the plate member includes pure iron whose thermal conductivity is relatively high. Meanwhile, the iron-nickel layers, which are formed on the plate member, are relatively thin. Therefore, the low-expansion unit has a relatively large thermal conductivity in a direction of thickness thereof.

Low-expansion unit, method of manufacturing the same and semiconductor provided with the same

A plate of an expanded metal and two metal plates are overlaid on one another. The expanded metal plate has a plurality of meshes. The linear expansion coefficient of the expanded metal is equal to or less than 8&#xd7;10/&#xb0; C., and the thermal conductivity of the metal plates is equal to or more than 200 W/(m&#xb7;K). Then, the metal plates and the expanded metal plate are subjected to hot rolling to be rolled and joined. The rolling and joining are performed in two stages. In the first stage, the meshes of the expanded metal plate are filled with the material of the metal plates. In the second stage, the rolling and joining are performed such that the composite material has a predetermined thickness. The volumetric ratio of the expanded metal plate to the composite material is in a range between 20% and 70%, inclusive. The composite material, which has an improved thermal conductivity and strength and is suitable for heat dissipating substrate, is manufactured at a reduced cost.

Composite material and method for manufacturing the same

A board-shaped thermal conductor base board () is arranged on the bottom surface of a power module (). Substrates () and () are arranged on the top surface of the thermal conductor base board (), and semiconductor elements () and () are respectively arranged on the top surfaces of the substrates () and (). The semiconductor elements () are surrounded by a resinous case (). A source electrode () is attached above and apart from the semiconductor elements () by using the resinous case (). The connection between the source electrode () and the sources of the semiconductor elements () are connected by wire bonding.

Semiconductor device

A heat spreader includes an electromagnetic soft iron sheet and a plating layer formed on the surface of the sheet. The plate is made of a rustproof metal. An electronic component is mounted on an aluminum base with an HITT substrate and the heat spreader in between. The heat spreader is manufactured at low cost and has a favorable property as a heat dissipating material.

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Kariya, Japan

Eiji Kono