Tdk Corporation

Sae Magnetics (h.k.) Limited

Eiji Komura

Koji Shimazawa

Tsutomu Chou

Kosuke Tanaka

Shinji Hara

Seiichi Takayama

Daisuke Miyauchi

Susumu Aoki

Yasuhiro Ito

Yohei Shiokawa

Naoki Ohta

Tomoyuki Sasaki

Ryo Hosoi

Tetsuya Roppongi

Satoshi Tomikawa

Takashi Honda

Keita Kawamori

Maiko Shirokawa

Keita Suda

Takahiko Izawa

Norikazu Ota

Osamu Shindo

Akimasa Kaizu

Makoto Isogai

Hiraku Hirabayashi

Kazuki Sato

Kei Hirata

Tomohito Mizuno

Nobuyuki Mori

Yuji Kakinuma

Shuichi Okawa

Hitoshi Hatate

Yasutoshi Fujita

Takafumi Kobayashi

Atsushi Tsumita

Takeshi Tsutsumi

Hideki Tanzawa

Tsutomu Chuo

An electromagnetic wave sensor includes a substrate having transmittance of electromagnetic waves having a specific wavelength, an insulator layer provided on one surface side of the substrate, a thermistor film disposed to have a space between the thermistor film and one surface of the substrate, and a wiring part provided inside or on a surface of the insulator layer and electrically connected to the thermistor film, wherein a transmittance of the electromagnetic waves at a portion facing the thermistor film is relatively higher than a transmittance of the electromagnetic waves at a portion where the wiring part is provided in a layer in which the insulator layer is provided.

Electromagnetic wave sensor

This magnetization rotational element includes a spin injection region that extends in a first direction, a first ferromagnetic layer that is laminated on the spin injection region, and a metal region that is adjacent to the spin injection region with an insulator interposed therebetween in a second direction orthogonal to the first direction in a plan view in a lamination direction.

Magnetization rotational element, magnetoresistance effect element, and magnetic memory

Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.

Magnetoresistance effect element

This spin-orbit torque type magnetization rotational element () is provided with: a spin-orbit torque wiring (); a first ferromagnetic layer () that is laminated on the spin-orbit torque wiring; a first nonmagnetic metal layer () and a second nonmagnetic metal layer () that are connected to the spin-orbit torque wiring at positions flanking the first ferromagnetic layer in a plan view from the second direction, and a first insulating layer () surrounding the spin-orbit torque wiring, wherein the gravity center (G) of the first ferromagnetic layer is positioned on a side closer to the first nonmagnetic metal layer or the second nonmagnetic metal layer than is a reference point (S) located at the center between the first and second nonmagnetic metal layers in the first direction, and the first insulating layer is any one selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide, and magnesium oxide.

Spin-orbit torque type magnetization rotational element, spin-orbit torque type magnetoresistance effect element, and magnetic memory

A magnetoresistance effect element includes: a laminate body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring connected to the laminate body. A second surface opposite to a first surface of the spin-orbit torque wiring in contact with the laminate body is curved in a first direction orthogonal to a direction in which the laminate body is laminated.

Magnetoresistance effect element and magnetic memory

A thermistor element includes: a thermistor film; a first electrode provided in contact with one surface of the thermistor film; and a pair of second electrodes provided in contact with an other surface of the thermistor film, wherein the thermistor film is provided to cover a periphery of the first electrode.

Thermistor element and electromagnetic wave sensor

A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.

A resistive element array circuit includes word lines, bit lines, resistive elements, a selector, a differential amplifier, and a ground terminal. The word lines are coupled to a power supply. The resistive elements are each disposed at an intersection of corresponding one of the word lines and corresponding one of the bit lines. The selector is configured to select one word line and one bit line. The differential amplifier includes a positive input terminal configured to be coupled to the selected one of the bit lines which is selected by the selector, a negative input terminal configured to be coupled to non-selected one of the bit lines which is not selected by the selector and to non-selected one of the word lines which is not selected by the selector, an output terminal being coupled to the negative input terminal. The ground terminal is coupled to the positive input terminal.

Resistive element array circuit, resistive element array circuit unit, and infrared sensor

A magnetoresistance effect element according to an embodiment includes: a spin orbit torque wiring extending in a first direction; a laminated body laminated on the spin orbit torque wiring and having a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; a conductive layer in contact with a side of the laminated body opposite to the spin orbit torque wiring; and a heat dissipation layer separated from the laminated body in the first direction and connected to the spin orbit torque wiring and the conductive layer.

Magnetoresistance effect element and magnetic recording array

A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.

Heat utilizing device

An electromagnetic wave sensor that limits the influence on bolometer membranes that is caused by heat from a local heat source is provided. Electromagnetic wave sensor has first substrate, second substrate that faces first substrate so as to form inner space between first substrate and second substrate, wherein second substrate transmits infrared rays; a plurality of bolometer membranes that is provided in inner space and that is supported by second substrate; local heat source that is formed in first substrate; first electric connection member that connects first substrate to second substrate; and lead that extends on or in second substrate and that connects first electric connection member to bolometer membrane.

A spin-orbit torque type magnetization rotational element includes; a spin-orbit torque wiring that extends in a first direction; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring; and a first nonmagnetic metal layer and a second nonmagnetic metal layer that are connected to the spin-orbit torque wiring at positions flanking the first ferromagnetic layer in the first direction in a plan view from the second direction, wherein the gravity center of the first ferromagnetic layer is positioned on a side closer to the first nonmagnetic metal layer or the second nonmagnetic metal layer than is a reference point located at the center between the first and second nonmagnetic metal layers in the first direction.

A storage element includes a first ferromagnetic layer; a second ferromagnetic layer; a nonmagnetic layer that is sandwiched between the first ferromagnetic layer and the second ferromagnetic layer in a first direction; a first wiring which extends in a second direction different from the first direction, and the first wiring being configured to sandwich the first ferromagnetic layer with the nonmagnetic layer in the first direction; an electrode which sandwiches the second ferromagnetic layer at least partially with the nonmagnetic layer in the first direction; and a compound part which is positioned inside the electrode and has a lower thermal conductivity than the electrode.

Storage element, semiconductor device, magnetic recording array, and method of producing storage element

Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.

Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and magnetic memory

A spin-orbit-torque magnetoresistance effect element of the present invention includes: a functional unit, a first ferromagnetic layer whose magnetization direction is configured to be fixed, a second ferromagnetic layer whose magnetization direction is configured to change, and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer being laminated therein; a spin-orbit torque wiring which extends in a first direction which intersects a lamination direction of the functional unit and is joined to the second ferromagnetic layer; a heat sink layer which extends in the first direction, is disposed so that the heat sink layer and the spin-orbit torque wiring at least partially overlap when viewed in a plan view from the lamination direction, and is provided spaced from the spin-orbit torque wiring in the lamination direction by a distance of twice a thickness of the functional unit or less in the lamination direction thereof.

Growing community of inventors

Tokyo, Japan

Eiji Komura