Elpida Memory, Inc.

Other

Eiji Kitamura

Nobuyuki Nakamura

Shinichi Horiba

Kazutaka Manabe

A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region.

Semiconductor device comprising a gate electrode having an opening

A semiconductor device includes an antifuse element. The semiconductor device includes a first well of a first conductivity type disposed in a semiconductor substrate; a first insulating film on the first well; a first conductive film of the first conductivity type on the first insulating film; and an impurity-introduced region of the first conductivity type. The impurity-introduced region of the first conductivity type in the first well is higher in impurity concentration than the first well. The impurity-introduced region includes a first portion that faces toward the first conductive film through the first insulating film.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device forms an Ndiffusion layer to be a source/drain region of a grooved transistor simultaneously with an Ndiffusion layer of a channel region directly under a gate electrode of an antifuse element. The formation of the Ndiffusion layer directly under the gate electrode of the antifuse element stabilizes electrical connection between the gate electrode and the source/drain diffusion region even during writing with a low write voltage.

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Tokyo, Japan

Eiji Kitamura