Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Tohoku University

Skhynix Inc.

National Institute of Advanced Industrial Science and Technology

Eiji Kitagawa

Hiroaki Yoda

Toshihiko Nagase

Tadashi Kai

Tadaomi Daibou

Masatoshi Yoshikawa

Tatsuya Kishi

Katsuya Nishiyama

Naoharu Shimomura

Masahiko Nakayama

Koji Ueda

Makoto Nagamine

Minoru Amano

Kazuya Sawada

Tadaaki Oikawa

Taiga Isoda

Young Min Eeh

Yushi Kato

Shinji Yuasa

Kenichi Yoshino

Akio Fukushima

Hitoshi Kubota

Takao Ochiai

Daisuke Watanabe

Sumio Ikegawa

Daisuke Saida

Shigemi Mizukami

Terunobu Miyazaki

Kay Yakushiji

Chikayoshi Kamata

Hisanori Aikawa

Kenji Noma

Yutaka Hashimoto

Koji Ando

Taro Nagahama

Takahide Kubota

Junichi Ito

Saori Kashiwada

Jyunichi Ozeki

Megumi Yakabe

Takayuki Nozaki

Masaru Tokou

Yuichi Ohsawa

Satoshi Yanagi

Hiroshi Imamura

Hiroaki Maekawa

Kei Yakushiji

Yoshihisa Iwata

Tsuneo Inaba

Keiko Abe

Shigeki Takahashi

Akiyuki Murayama

Shigeto Fukatsu

Sung-Woong Chung

Yasuo Ando

Jae-Hyoung Lee

Tae-Young Lee

Mikihiko Oogane

Guk Cheon Kim

Ku Youl Jung

Jong Koo Lim

Jin Won Jung

Masatoshi Yoshkawa

Taeyoung Lee

Makoto Konoto

Wu Feng

Yoshishige Suzuki

A magnetic memory device includes a substrate; a first magnetoresistive effect element; and a second magnetoresistive effect element provided at a side of the first magnetoresistive effect element opposite to a side of the first magnetoresistive effect element at which the substrate is provided. A heat absorption rate of the first magnetoresistive effect element is lower than a heat absorption rate of the second magnetoresistive effect element.

Magnetic memory device

A magnetic memory device includes a magnetoresistance effect element including a first, second, and third ferromagnetic layer, a first non-magnetic layer between the first and second ferromagnetic layer, and a second non-magnetic layer between the second and third ferromagnetic layer. The second ferromagnetic layer is between the first and third ferromagnetic layer. The third ferromagnetic layer includes a fourth ferromagnetic layer in contact with the second non-magnetic layer, a third non-magnetic layer, and a fourth non-magnetic layer between the fourth ferromagnetic layer and the third non-magnetic layer. The first non-magnetic layer includes an oxide including magnesium (Mg). A melting point of the fourth non-magnetic layer is higher than the third non-magnetic layer.

Magnetic memory device that suppresses diffusion of elements

According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.

Magnetoresistive memory device

A memory device includes a first ferromagnetic layer, an insulating layer above the first ferromagnetic layer, a second ferromagnetic layer above the insulating layer, a capping layer on an upper surface of the second ferromagnetic layer, and an electrode on an upper surface of the capping layer. The second ferromagnetic layer includes iron atoms. The capping layer includes one or more elements identical to one or more elements in the second ferromagnetic layer. The electrode includes one or more elements identical to one or more of the elements in the capping layer and includes a material having a Vickers hardness higher than a Vickers hardness of an iron atom.

Memory device

A semiconductor memory device includes: a first memory cell and switching element coupled in series between a first and second interconnect; a second memory cell and switching element coupled in series between the first and a third interconnect; a third memory cell and switching element coupled in series between the first and a fourth interconnect; and a control circuit. The control circuit is configured to: in a first operation on the first memory cell, upon receipt of a first command, apply a third voltage between the first and second voltage to the third and fourth interconnect; and upon receipt of a second command, apply the first and third voltage to the fourth and third interconnect, respectively.

Semiconductor memory device and memory system

According to one embodiment, a magnetic memory device includes a substrate, a first layer stack, and a second layer stack at a same side of the first layer stack relative to the substrate, and farther than the first layer stack from the substrate. Each of the first and second layer stack includes a reference layer, a tunnel barrier layer provided in a direction relative to the reference layer, the direction being perpendicular to the substrate, a storage layer provided in the direction relative to the tunnel barrier layer, and a first nonmagnetic layer provided in the direction relative to the storage layer. A heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack.

According to one embodiment, a magnetic device includes a layer stack. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, a first nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer. The first ferromagnetic layer is interposed between the second nonmagnetic layer and the first nonmagnetic layer. The first nonmagnetic layer and the second nonmagnetic layer contain a magnesium oxide (MgO). The first ferromagnetic layer contains a higher amount of boron (B) at an interface with the first nonmagnetic layer than at an interface with the second nonmagnetic layer.

Magnetic device which improves write error rate while maintaining retention properties

According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.

Magnetic device and memory device

According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.

Magnetic device

According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.

Storage device

An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]or [x/Ru], x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.

Electronic device

A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnGa)Pt, the (MnGa)Pthaving a tetragonal crystal structure, where 45 atm %&#x2264;x&#x2264;75 atm %, 25 atm %&#x2264;y&#x2264;55 atm %, x+y=100 atm %, and 0 atm %&#x3c;z&#x2264;7 atm %.

Magnetoresistive element and magnetic memory

According to one embodiment, a magnetic memory device includes a stack structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a first layer containing iron (Fe) and boron (B), a second layer containing iron (Fe) and boron (B), and a third layer provided between the first layer and the second layer and containing a semiconductor.

Magnetic memory device with stack structure including first and second magnetic layers and nonmagnetic layer between the first and second magnetic layers

According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a second magnetic layer; a non-magnetic film between the first magnetic layer and the second magnetic layer; a first layer on an opposite side of a side of the non-magnetic layer of the first magnetic layer, the first layer including magnesium oxide as a principal component; and a second layer between the first film and the first magnetic layer, the second layer including a material different from a material of the first layer.

Magnetoresistive effect element and magnetic memory

A magnetoresistive element according to an embodiment includes: a first layer containing nitrogen; a reference layer opposed to the first layer, the reference layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the reference layer being fixed; a storage layer disposed between the first layer and the reference layer, the storage layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the storage layer being changeable, and the storage layer including a second layer containing boron, and a third layer disposed between the second layer and the reference layer and containing boron, a boron concentration of the third layer being lower than a boron concentration of the second layer; and an intermediate layer disposed between the third layer and the reference.

Growing community of inventors

Yokohama, Japan

Eiji Kitagawa