Anritsu Corporation

Eiji Kawazura

Satoshi Matsumoto

Kenji Kawano

Masaya Nanami

Jun Hiraoka

Seiji Uchida

Yuji Sato

Toru Nakahira

Hiroaki Yoshidaya

Nobuhiro Igarashi

Yuichi Sasaki

Herein disclosed is an optical modulator, having: a substrate (); and a center and ground electrodes (to), in which the substrate has ridge portions (to), the center and ground electrodes are respectively formed above the ridge portions, the ridge portions below the center and ground electrodes respectively have top parts () having a respective first and second end points () separated with a distance of 'W', the substrate has a bottom surface () between the ridge portions having center and midway points () positioned with a respective distance of W/2 and W/N (3&#x2266;N&#x2266;25) from the first end point, the ridge portion below the center electrode has a normal line (), and the center point and the midway point define a straight line () crossed with the normal line at an angle larger or equal to 90.1&#xb0;.

Optical modulator

In an optical modulator comprising substratehaving electro-optical effect, two optical waveguidesformed in the substrate, buffer layerformed on the substrate, traveling-wave electrodehaving center conductorand ground conductorsabove the buffer layer, and ridge sections formed with recessed sectionstoby carving at least a part of the substrate where an electrical field strength of high-frequency electrical signal propagating the traveling-wave electrode is strong, in which the ridge sections include center conductor ridge sectionhaving the center conductor formed above and ground conductor ridge sectionhaving the ground conductor formed above, and the center conductor ridge section has one of the two optical waveguides formed therein, the recessed sections are practically symmetrical to the center line between the two optical waveguides and the traveling-wave electrode is practically symmetrical to the center line of the center conductor.

A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer

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Ebina, Japan

Eiji Kawazura