Renesas Electronics Corporation

Nec Corporation

Nec C Orporation

Eiji Kariyada

Katsumi Suemitsu

Tetsuhiro Suzuki

Hironobu Tanigawa

Kaoru Mori

Kiyokazu Nagahara

Shuichi Ohkubo

Norikazu Ohshima

Tadahiko Sugibayashi

Takuya Kitamura

Nobuyuki Ishiwata

Shunsuke Fukami

Tatsunori Ide

Sadahiko Miura

Yasuaki Ozaki

The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MWon the side of a magnetization fixed layer MFX. A magnetic wall MWis moved to the magnetic wall MWside by causing current to flow from the formed side of the magnetic wall MW. Thus, an electrical resistance Rbetween a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.

Semiconductor device

The present invention makes it possible to inhibit an MR ratio from decreasing by high-temperature heat treatment in a magnetoresistive effect element using a perpendicular magnetization film. The magnetoresistive effect element includes a data storage layer, a data reference layer, and an MgO film interposed between the data storage layer and the data reference layer. The data storage layer includes a CoFeB film coming into contact with the MgO film, a perpendicular magnetization film, and a Ta film interposed between the CoFeB film and the perpendicular magnetization film. The CoFeB film is magnetically coupled to the perpendicular magnetization film through the Ta film.

Magnetoresistive effect element and magnetic memory

A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

Magnetoresistive effect element and magnetic random access memory using the same

A method of manufacturing a magnetic memory cell, includes forming a tunnel barrier layer over a first magnetic layer, forming a second magnetic layer over the tunnel barrier layer, forming a mask over the second magnetic layer, etching an unmasked part of the second magnetic layer to an intermediate position of the second magnetic layer in a thickness direction of the second magnetic layer, and forming a metallic oxide layer by oxidizing an unetched part of the unmasked part of the second magnetic layer.

Magnetic memory cell and method of manufacturing the same

The present invention suppresses short circuits of a magnetic memory cell and a deterioration of the characteristics of a magnetic layer. A magnetic memory cell includes: a data storage layer; a tunnel barrier layer formed on the data storage layer; a reference layer formed on the tunnel barrier layer so as to cover a part of the tunnel barrier layer; and a metallic oxide layer formed on the tunnel barrier layer without covering the reference layer. The metallic oxide layer contains an oxide of a material of a contact part of the reference layer with the tunnel barrier layer.

A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.

Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film

A magnetic body device has a stacked structure comprising an underlying layer, a magnetic body layer, and a cap layer. The material for the underlying layer is different from that for the cap layer. The magnetic body layer has a free magnetization region having perpendicular magnetic anisotropy and a first characteristic change region and a second characteristic change region situated on both sides of the free magnetization region in a first in-plane direction. The perpendicular magnetic anisotropy of the first characteristic change region and the second characteristic change region is at a level lower than that of the free magnetization region. An external magnetic field containing a component in the first in-plane direction is applied to the free magnetization region. Further, a current in the first in-plane direction is supplied to the free magnetization region.

Magnetic body device and manufacturing method thereof

A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to &#x2212;z direction by the second magnetization fixed layer.

Magnetic memory

The method of manufacturing an optical information recording medium includes a first resin applying step of applying a first photo-curing resin to one surface of a first substrate, a first resin curing step of laminating a first stamper having an uneven surface on the first photo-curing resin, and irradiating ultraviolet rays via the first stamper to cure the first photo-curing resin, a second resin applying step of applying a second photo-curing resin to the other surface of the first substrate, a second resin curing step of laminating a second stamper having an uneven surface on the second photo-curing resin, and irradiating ultraviolet rays via the first second to cure the second photo-curing resin, a first stamper peeling step of peeling the second stamper from the second photo-curing resin, and a first recording layer laminating step of laminating a first recording layer on an exposed surface of the second photo-curing resin.

Method for manufacturing optical information recording medium, and optical information recording medium

Provided is a manufacturing method of an optical information storage medium irradiated with laser beams to optically record or reproduce information. A method of manufacturing an optical information storage medium according to the present invention includes forming asperity patterns for guiding laser beams on both sides of a second substrate, forming information recording layersandin the asperity patterns, bonding a first substrateto a surface where one information storage layeris formed in the second substratewith an ultraviolet curable resinformed therebetween, and bonding a third substrateto a surface where another information storage layeris formed in the second substratewith an ultraviolet curable resinformed therebetween.

Optical information recording medium and method of manufacturing the same

A magnetic memory has a magnetic recording layer, a reference layer connected via a non-magnetic layer to the magnetic recording layer, first and second magnetization pinning layers disposed below the magnetic recording layer. The magnetic recording layer and the reference layer have a perpendicular magnetic anisotropy. The magnetic recording layer has a magnetization reversal region having a reversible magnetization and overlapping the difference layer, a first magnetization pinned region connected to a first boundary of the magnetization reversal region with the direction of the magnetization being fixed in a first direction, and a second magnetization pinned region connected to a second boundary of the magnetization reversal region with the direction of magnetization being fixed in a second direction anti-parallel to the first direction. The first and the second magnetization pinning layers fix the magnetization of the first and the second magnetization pinned regions.

Magnetic memory and manufacturing method thereof

An optical information recording medium includes a dielectric layer and an Ag-based reflection layer or an Ag-based metal semitransparent layer adjacent to the dielectric layer. The dielectric layer contains niobium oxide between 50 mol % and 75 mol %, zinc sulfide between 10 mol % and 30 mol %. The dielectric layer further contains an additive which is at least one of or a mixture of at least two of the following materials: aluminum oxide, tantalum oxide, silicon oxide, cerium oxide, yttrium oxide, hafnium oxide and bismuth oxide. By this structure layers, an Ag-based reflection layer or Ag-based metal semitransparent layer can apply to a phase-change optical disc without requiring a layer for preventing the Ag-based layer from sulfurization. An optical information recording medium having high productivity can be provided.

Optical information recording medium

A phase change optical disk includes a first dielectric film, a recording film, a second dielectric film and a reflecting film which are consecutively formed on a substrate. The second dielectric film includes therein a zinc sulfide at a rate of 10 to 40 mol % and a tantalum oxide at a rate of 20 to 50 mol %, for preventing sulfuration of Ag in the reflecting film.

Optical disk including a sulfuration suppressing dielectric film

An optical information recording medium includes an oxide/nitride dielectric film that shows a film forming rate higher than that of SiON film and hence is adapted to mass production. The recording medium shows little change in the reflectivity after a long environment test. A first dielectric layer made of ZnS&#x2014;SiO, an oxide/nitride dielectric layer made of silicon-nickel oxide/nitride, a second dielectric layer made of ZnS&#x2014;SiO, a first interface layer made of GeN, a recording layer made of GeSbTe, a second interface layer made of GeN, a third dielectric layer made of ZnS&#x2014;SiOand a reflection layer are laid sequentially on a transparent substrate in the above mentioned order. The oxide/nitride dielectric layer is formed by reactive sputtering in a mixed gas atmosphere containing Ar gas, Ogas and Ngas. The refractive index of the oxide/nitride dielectric layer is made lower than that of the first dielectric layer and that of the second dielectric layer and the light absorption coefficient of the recording layer is made lower in an amorphous state than in a crystalline state.

An optical information recording medium is provided that records and reproduces information by means of laser beams irradiated from the side of the light transmission layer. The optical information recording medium provides a large capacity and a high degree of reliability and is inexpensive. At least a reflective film and a light transmission layer are formed, in the presented order, on the information recording surface of the support substrate. Information is recorded and/or reproduced by using the laser beam irradiated from the side of the light transmission layer. The reflective film, which is made of an alloy containing Ni and Cr as main components, has a thickness of 20 nm or more to 80 nm or less.

Growing community of inventors

Tokyo, Japan

Eiji Kariyada