Sumco Corporation

Industry-University Cooperation Foundation Hanyang University

Eiji Kamiyama

Seiichi Nakamura

Tetsuya Nakai

Takeo Katoh

Kenji Aoki

Kazuhiro Yamamoto

Takashi Nakayama

Jea Gun Park

Etsurou Morita

Takehiro Tsunemori

Shin Uchino

[Problem] Provided is a method of processing image data capable of, at the time of measuring a wafer in a circumferential direction thereof using a surface inspection device employing a laser scattering method to create a Haze map, reducing or removing occurrence of a noise resulting from change in detection sensitivity of the device. Further, provided is a method of creating an image by using the method of processing an image data. [Solving Means] There is provided a method of processing image data, including the steps of: measuring a haze value corresponding to each position on a wafer surface by using a wafer surface inspection device; and, subjecting image data formed by the haze value corresponding to each position on the wafer surface to an image data process along a direction in which the haze value is measured, to remove a noise component. Further, there is provided a method of creating an image, in which a Haze map after the image data process is created using the image data processed through the method of processing the image data.

Image data processing method and image creating method

A semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out, and a judgment as to whether a semiconductor wafer is a non-defective wafer is made visually based on a haze map of the semiconductor wafer subjected to the sorting. Moreover, a semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out. Then, from the semiconductor wafers subjected to the sorting, a semiconductor wafer whose in-plane standard deviation and in-plane average value of the haze signals in a wafer plane have a specific relationship is sorted out, and this semiconductor wafer is judged to be a non-defective wafer. In this way, a method for judging whether a semiconductor wafer is a non-defective wafer or a defective wafer, the method that can make a judgment more uniform and accurate without dependence on the difference in the S/N ratio between inspection apparatuses using a laser scattering method, is provided.

Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering method

A laser scattering defect inspection system includes: a stage unit that rotates a workpiece W and transports the workpiece W in one direction; a laser light source that emits a laser beam LB toward the workpiece W mounted on the stage unit; an optical deflector that scans the laser beam LB emitted from the laser light source on the workpiece W; an optical detector that detects the laser beam LB scattered from the surface of the workpiece W; a storage unit that stores defect inspection conditions for each inspection step of a manufacturing process of the workpiece W, where the conditions include the rotation speed and the moving speed of the workpiece W by the stage unit, the scan width on the workpiece W and the scan frequency by the optical deflector; and a control unit that reads the defect inspection conditions stored for each inspection step in the storage unit and controls the driving of the stage unit and the optical deflector under the conditions.

System and method of two-stepped laser scattering defect inspection

A wafer surface measuring apparatus which measures a surface of the wafer by irradiating a laser beam on a wafer comprising a measuring stage that supports the outer edge of the wafer and loads the wafer in a manner not contacting the rear surface of the wafer and the stage surface, a wafer carrying means that moves the wafer over the measuring stage and loads the wafer on the measuring stage from an upward side, a rotary drive unit which rotates the measuring stage, and an ejection hole formed at a center portion of the stage surface to supply gas to a rear surface of the wafer loaded on the measuring stage. The wafer carrying means includes a chuck which sucks and holds the surface of the wafer in a non-contact manner and bends the wafer in an upwardly convex shape.

Wafer surface measuring apparatus

A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

Method for manufacturing SOI wafer

SOI substrate, silicon substrate therefor and it's manufacturing method

The present invention provides a bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing the etching by only 1 nm to 1 &#x3bc;m with a solution having an etching effect on a surface of an active layer of a bonded substrate which has been prepared by bonding two substrates after one of them having been ion-implanted and then cleaving off a portion thereof by heat treatment. SC-1 solution is used for performing the etching. A polishing, a hydrogen annealing and a sacrificial oxidation may be respectively applied to the active layer before and/or after the etching. The film thickness of this active layer can be made uniform over the entire surface area and the surface roughness of the active layer can be reduced as well.

Growing community of inventors

Tokyo, Japan

Eiji Kamiyama