Kabushiki Kaisha Kobe Seiko Sho

Kobelco Research Institute, Inc.

Other

Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Eiji Iwamura

Katsutoshi Takagi

Kazuo Yoshikawa

Seigo Yamamoto

Takashi Oonishi

Takashi Kinoshita

Takayuki Hirano

Takashi Onishi

Hiroshi Gotoh

Toshimitsu Kohara

Koichiro Akari

Susumu Takeuchi

Yasuji Yoneda

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400&#xb0; C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 &#x3bc;&#x3a9;cm is obtained. The target is made of an Al alloy containing the above elements.

Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150&#xb0; to 400&#xb0; C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 &#x3bc;&#x3a9;cm is obtained. The target is made of an Al alloy containing the above elements. REEXAMINATION RESULTS The questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) forreexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) forreexaminations.

Aluminum alloy electrode for semiconductor devices

There is provided an electric connection-inspection device which does not impair a freedom of selection of using materials from a viewpoint of restriction in terms of product's function with the aptitude of electric features of electric resistance and physical properties of internal stress, and restriction in terms of manufacture as to the appropriation or not of employment of a plating method, and which has a fine construction provided with the excellent durability that an electrode element is hard to adhere and coagulate. An electric connection-inspection device for coming into electrically contact with an object to be inspected to input and output a signal, comprising a plurality of contact terminals, a coating of a second layer having the Young's modulus higher than that of a wiring base-material layer and whose specific resistance is not more than 1&times;10 &OHgr;cm being formed on the surface of the wiring base-material layer positioned at the extreme end of the contact terminal, and a coating of a third layer having a low coagulating property being formed on the surface of the second layer.

Connection/inspection device for semiconductor elements

A multilayer film formed body comprises an outermost layer comprising a diamondlike carbon film, a substrate comprising an iron material, and an intermediate layer comprising a first layer on the substrate side, and a second layer on the outermost layer side. The first layer comprises at least either metal of Cr and Al, and a second layer comprises an amorphous layer including carbon and at least either metal of Cr and Al. The second layer has a gradient structure where the metal decreases as the position becomes closer to the outermost layer. The hardness of the second layer increases stepwise or continuously as the position becomes closer to the outermost layer. The hardness of the second layer close to the first layer is close to the hardness of the first layer. The hardness of the second layer close to the outermost layer is close to the hardness of the outermost layer.

Multilayer film formed body

An onion-like carbon thin film is provided which contains carbon as a main component, has a film thickness of at least 20 nm or more, and has clusters of an onion-like structure. Specifically, there is provided the onion-like carbon thin film satisfying the foregoing requirements, and in which (1) at least 20 or more clusters each having a diameter of 4 nm or more, and having an onion-like structure are contained per 0.001 &mgr;m ; or (2) the proportion of clusters each having an onion-like structure in a matrix is at least 50% by volume or more. The onion-like carbon thin film of the present invention is very useful in terms of availability in various industrial fields as a hard protective film or a solid lubricating film of the surface in various machine parts, electronic parts, and the like, or as a field electron emission material, or the like, an electronic part of a field emission display, or the like.

Onion-like carbon film and its production

A coating film and a coated machine component that have an excellent wear resistance, a low friction coefficient, and an excellent sliding performance are provided. A coating film of the present invention is a DLC hard multilayer film which has a low hardness hard carbon layer containing a graphite cluster having a mean size of 2 nm or more, and a high hardness hard carbon layer containing a graphite cluster having a mean size of 1 nm or less, the low hardness carbon layer and the high hardness carbon layer being amorphous structures each containing carbon as a main component, and being alternately laminated. The graphite cluster in the low hardness hard carbon layer preferably has a shell structure in which the C-planes of graphite are laminated in the form of spherical nuclei. Further, it is preferable that the outermost layer A is formed of the low hardness hard carbon layer, and the layer thickness thereof is set at from 2 nm to 200 nm. Still further, a component of the present invention is formed by laminating the DLC hard multilayer film on a substrate with an intermediate layer interposed therebetween.

Diamond-like carbon hard multilayer film and component excellent in wear resistance and sliding performance

An active matrix type liquid crystal display, in which the reliability is enhanced by preventing the short-circuit and insulation breakdown of a gate insulating portion and the delay time of a gate bus line is shortened by reducing the resistivity of an interconnect film. The liquid crystal display of this type is manufactured by the steps of forming an interconnect/electrode film on a substrate by physical deposition; patterning the interconnect/electrode film; and anodic-oxidizing part or all of the interconnect/electrode film. In this method, the interconnect/electrode film is formed of an Al alloy containing at least one kind selected from a group consisting Fe, Co and rare earth elements in an amount of 0.1 to 10 at %; and the thickness of the anodic oxidation film is specified to be in the range of 200 &angst; or more.

Method of manufacturing active matrix type liquid crystal display

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.

Electrode and its fabrication method for semiconductor devices, and

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150.degree. to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.

Growing community of inventors

Kobe, Japan

Eiji Iwamura