Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Jidoshokki

Eiji Ishikawa

Kenji Kondo

Hajime Soga

Takaaki Aoki

Yoshikazu Sakano

Mikimasa Suzuki

Yuji Kato

Kazuo Takata

Yutaka Kudou

Yuji Ichikawa

Satoshi Tani

Yusuke Hoshikawa

Tsuyoshi Seike

Sunao Hirota

This cooling fan device for a vehicle comprises: a fan shroud which is shaped as a box accommodating a radiator and/or a condenser, and which has an opening in the front side in the travel direction of the vehicle and a fan coupling surface in the rear side in the travel direction; at least two cooling fans disposed in the fan coupling surface, the cooling fans having center axes vertically separated from each other by a predetermined distance; and a shield rib extending downward from the top of the fan coupling surface, protruding toward the radiator and/or the condenser, and having a top end and a bottom end, the shield rib being provided to the fan coupling surface between the adjacent cooling fans. The top end and/or the bottom end of the shield rib have a cutout section allowing air to pass between the adjacent cooling fans.

Cooling fan device for vehicle

A method of etching for forming a groove in a SOI substrate includes a forming step, in which a mixed gas plasma is formed by using a mixed gas of a fluorinate gas and an oxygenic gas, and an applying step, in which a high-frequency bias is intermittently applied to the SOI substrate. In the applying step, the high-frequency bias is a temporally modulated high-frequency electricity. According to the method of etching, a yielding rate and a productivity can be improved.

Method for etching and apparatus for etching

A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.

Semiconductor device having three-dimensional construction and method for manufacturing the same

A surface of a semiconductor substrate is selectively etched to form a first opening, which serves as the opening of a trench. A USG film is deposited on the first opening. A second opening, the width of which is smaller than that of the first opening, is formed in the USG film within the first opening. An inner section of the trench is formed by etching while using the USG film as a mask. The inner surface of the inner region is thermally oxidized to form a silicon oxide film, and a gate insulating film is made by the silicon oxide film and the USG film. A gate electrode is formed in the trench. The gate insulating film is relatively thick at the opening of the trench, so the breakdown voltage at the opening of the trench is increased.

Method for manufacturing a semiconductor device having a trench and a thick insulation film at the trench opening

In a method for manufacturing a semiconductor device, first, a trench is formed on a semiconductor substrate by anisotropic etching, and a reaction product is produced and deposited on the inner wall of the trench during the anisotropic etching. Then, isotropic etching is performed to round a corner of a bottom portion of the trench without removing the reaction product. The isotropic etching can round the corner of the trench without etching the side wall of the trench that is covered by the reaction product.

Method of forming a trench with a rounded bottom in a semiconductor device

A method of manufacturing a trench gate type IGBT element, which can sufficiently round off a corner at a bottom of a trench with restricting silicon from being excessively etched. A trench is formed at a surface of a P -type monocrystalline silicon substrate by conducting an anisotropic etching (STEP 1). A corner portion at a bottom of the trench is formed to a concave shape surface by conducting a concave etching (STEP 2). The concave etching etches the silicon substrate so that a diameter of the trench is gradually reduced as the etching advances. After that, the corner portion at a bottom of the trench is rounded off by conducting an isotropic etching (STEP 3). Since the corner portion is chamfered, a radius of curvature of the corner portion of the bottom of the trench can be increased even if an amount of the etching using the isotropic etching in the STEP 3 is small.

Integrated gate bipolar transistor and method of manufacturing the same

After performing an etching process with respect to one substrate, the substrate is taken out from an etching chamber. Then, a dummy substrate is disposed in the etching chamber and a cleaning process is performed. The cleaning process includes a cleaning step for etching reaction products produced during the etching process to be removed, a seasoning step for adjusting the atmosphere within the etching chamber and the temperature of the substrate, and a purge step for removing suspended foreign materials without generating plasma. By performing the cleaning process, the successive etching process can be performed without generating any black silicon on the substrate, thereby attaining a high production yield.

Growing community of inventors

Okazaki, Japan

Eiji Ishikawa