Hamamatsu-photonics K.k.

Hamamatsu Photonics Kabushiki Kaisha

Hamamatsu Terebi Kabushiki Kaisha

Eiji Inuzuka

Yutaka Tsuchiya

Yasushi Hiruma

Wataru Nagata

Kouji Suzuki

Shigehisa Oguri

Yoshihiko Mizushima

Shigeru Uchiyama

Takashi Iida

Teruo Hiruma

Takehiro Kurono

Kiyoshi Kamiya

Koji Suzuki

Masahumi Oshiro

Yuji Shinoda

The present invention relates to an inspection system for transparently taking an image of inside of a semiconductor device to analyze anomalous occurrence. First, image data obtained under infrared ray illumination are converted into a first left-to-right reversed image data in which the obtained image data are reversed left to right and the first left-to-right reversed image data are stored. Next, very weak light emitted from an anomalous portion when the semiconductor device is biased is picked up under no illumination. Then, image data of very weak light is converted into a second left-to-right reversed image data in which the image data of weak light are reversed left to right. The first and second left-to-right image data are superimposed to superimpose the image specifying the anomalous location on an image of chip patterns in the semiconductor device and the superimposed image is displayed. Further, in the infrared-ray epi-irradiation means, an optical filter made of the same material as that of the semiconductor device to be measured is used to form infrared rays for illumination, so that when the back surface of the semiconductor device is irradiated with infrared rays produced by the optical filter, light having a short wavelength which is easily reflected on the surface of the semiconductor device is interrupted and infrared rays having high transmittance against the semiconductor device can be obtined.

Semiconductor device inspection system

A semiconductor device inspection system having an improved measurement accuracy and in operability. A semiconductor device is observed from the bottom surface side. First, image data obtained upon image pickup under infrared illumination is converted into first left-to-right-reversed image data corresponding to a left-to-right-reversed image and the first reversed image data is stored. Then an image is obtained under no illumination from very weak light emitted from an abnormal portion when a bias is applied to the semiconductor device. Image data of the very weak light image is then converted into second left-to-right-reversed image data corresponding to a left-to-right-reversed image. The first and second left-to-right-reversed image data are superimposedly added to each other and a superimposed image is displayed with the abnormal portion being superimposed on a chip pattern as seen from the top surface of the semiconductor device.

Semiconductor device inspection system involving superimposition of

Photoluminescence or electroluminescence from a material substrate is measured in a photon-counting range. Luminous efficiency of the substrate in its normal operation range is evaluated on the basis of the measured data. The luminescence is measured in an excitation range of the material including a transition excitation level corresponding to a transition luminous level from a low luminous range to a regular, intense luminous range. Two-dimensional distribution of the luminous efficiencies can be obtained by measuring the luminescence from small divided areas of the substrate.

Method and apparatus for evaluating luminous efficiency

Configuration image data representing an external form of an object is stored in advance in a configuration image memory. A two-dimensional image of faint light emitted from the object is detected by a high-sensitivity image pickup means including a two-dimensional photon-counting tube. Faint light image data representing the detected faint light image is accumulated by an adder circuit, and stored in a faint light image memory. The stored faint light image data is superposed on the stored configuration data for each accumulating operation, and based on the superposed image data a superposed image is successivley displayed on a display device.

Image processing apparatus

New types of devices for measuring two-dimensional photon-caused or corpuscular-ray-caused image signals by means of a special television imaging technology suitable for an extremely low level of incident visible light, infra-red, ultra-violet, X-rays, .gamma.-rays, protons or neutrons are disclosed. These image signals are sensed by an electron emitting layer, i.e., a photoelectric emitter or a secondary electron emitter, which can respond to photons or corpuscular rays, and then amplified by a micro-channel-plate which can multiply the emitted electrons to a finite number with their positional relationships remaining in the two-dimensional area. The amplified signals are digitally processed to be displayed on a television picture monitor. The image signals on the television picture monitor can be printed out or saved in magnetic media.

Measuring devices for two-dimensional photon-caused or

A trigger circuit comprises a shaping circuit connected between an input terminal receiving a trigger signal and an avalanche transistor. The shaping circuit has a pass band whose upper limit frequency is much lower than the frequency component of the leading edge of the input trigger signal, and it has a saturation characteristic to provide a pulse whose time width is sufficient to start the avalanche transistor.

Trigger circuit

Growing community of inventors

Shizuoka, Japan

Eiji Inuzuka