Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Eiji Hirata

Atsumi Niwa

Taishin Yoshida

Yoshinobu Furusawa

Yosuke Ueno

Daijiro Anai

Shimon Teshima

Takahiro Uchimura

Shun Kaizu

Shizunori Matsumoto

Yusuke Ikeda

Takahiro Akahane

Toru Akishita

Yusuke Minagawa

Hiroaki Ebihara

Shinichirou Etou

Hiroshi Yuasa

Masafumi Kusakawa

Kazunori Yamamoto

Yasutaka Kimura

Marie Toyoshima

Ikuhiro Tamura

Naoto Nagaki

Tomohiro Morimoto

Takeshi Oyakawa

There is provided a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device that enable a solid-state imaging device capable of outputting a spatial difference to be realized at low cost. The solid-state imaging device includes: a pixel including a photoelectric conversion element, a first capacitive element, and a second capacitive element; a reading circuit shared by a plurality of the pixels including a first pixel and a second pixel; and a vertical scanning circuit configured to control the pixel and the reading circuit, in which the vertical scanning circuit performs first control of simultaneously reading signal levels of different capacitive elements of the first and second capacitive elements in the first pixel and the second pixel. The present disclosure can be applied to, for example, a solid-state imaging device or the like in which a pair of capacitors is provided for each pixel, and these capacitors hold two signals of a reset level and a signal level to be subjected to AD conversion.

Solid-state imaging device, method for driving the same, and electronic device for simultaneously reading signal levels of different capacitive elements

The range-finding apparatus includes a light source, an optical receiver, a setting unit, a detector, and a calculation unit. The light source projects light with a first irradiation pattern in a first period and projects light with a second irradiation pattern in a second period. The optical receiver receives light to output a pixel signal. The setting unit sets a reference signal based on the pixel signal in the first period. The detector detects whether or not the pixel signal varies from the reference signal by a first value or more in the second period and outputs a first detection signal indicative of a result obtained by the detection. The calculation unit calculates a distance to a to-be-measured object using the first detection signal.

Range-finding apparatus and range-finding method

An image processing apparatus according to an embodiment of the present technology includes a first generator and a second generator. The first generator generates projection images correspondingly to respective monochromatic projectors of a plurality of monochromatic projectors using respective correction parameters, each projection image including a first pixel region that includes a content image, and a second pixel region that is a region other than the first pixel region, the second pixel region including a feature-point image in at least a portion of the second pixel region. The second generator detects the feature-point image in a captured image obtained by capturing the projection image projected by each of the plurality of monochromatic projectors, and generates the correction parameter on the basis of a result of the detection of the feature-point image.

Image processing apparatus, image processing method, and program

A solid-state imaging device adapted to encrypt data is described. The solid-state imaging device may include a sensor die comprising an array of imaging pixels formed on a first side of the sensor die and first wiring layers formed on a second side of the sensor die, wherein at least one of the imaging pixels is configured to generate specific signals; a logic die comprising second wiring layers formed on a first side of the logic die; and an encryption processor on the logic die configured to generate encrypted data using the specific signals. The first side of the logic die may be mounted adjacent to the second side of the sensor die and the first wiring layers electrically connect to the second wiring layers, wherein the at least one of the imaging pixels, the encryption processor, and a connecting conductor in which the specific signals pass through from the at least one of the imaging pixels to the encryption processor are located interior to the solid-state imaging device.

Solid-state imaging device and information processing method of solid-state imaging device

There is provided an imaging device including a pixel array section including pixel units two-dimensionally arranged in a matrix pattern, each pixel unit including a photoelectric converter, and a plurality of column signal lines disposed according to a first column of the pixel units. The imaging device further includes an analog to digital converter that is shared by the plurality of column signal lines.

Imaging element, imaging method and electronic apparatus

The present technology is provided to accurately correct uneven luminance while suppressing an increase in the size of the solid-state imaging element. A pixel array unit includes a plurality of lines each including a predetermined number of pixels each being arrayed in a predetermined direction. An analog-to-digital conversion unit includes more than the predetermined number of analog-to-digital converters that convert analog signals into digital signals. A scanning circuit controls to sequentially select the plurality of lines and output more than the predetermined number of analog signals to the analog-to-digital conversion unit every time the line is selected. A correction unit performs black level correction processing on the digital signal.

Solid-state imaging element, electronic device, and method for controlling correction of luminance in the solid-state imaging element

There is provided an imaging device that includes a pixel, the pixel comprising: a photodetector; a control transistor; a capacitor coupled to the photodetector; a reset transistor coupled between the control transistor and the capacitor; an amplifier transistor having a gate terminal coupled to the capacitor; and a select transistor coupled to the amplifier transistor; a first signal line coupled to the select transistor; and a first amplifying circuit including a first input terminal coupled to the first signal line and a second input terminal configured to receive a first reference signal and an output terminal coupled to the control transistor.

Image sensor and imaging apparatus

Solid-state imaging element, electronic device, and method for correcting uneven luminance

The present disclosure relates to a solid-state imaging element capable of suppressing an occurrence of image breakup in imaging of a moving subject, a solid-state imaging element operation method, an imaging apparatus, and an electronic device. Pixel signals of G pixels (including Gb and Gr pixels) defined as a reference of a luminance value among pixels of images captured by an imaging element are simultaneously scanned to undergo analog-to-digital conversion in an order not causing stagnation in a predetermined direction of analog-to-digital conversion, and at this time, R and B pixels other than the pixels defined as the reference of the luminance value undergo analog-to-digital conversion by simultaneous scan of pixels in the vicinity of the G pixels defined as the reference of the luminance value that undergo analog-to-digital conversion. The present disclosure can be applied to an imaging apparatus.

Solid-state imaging element, solid-state imaging element operation method, imaging apparatus, and electronic device for suppressing image breakup of moving subjects

The present technology relates to a solid-state imaging device and an electronic apparatus that can increase the theoretical yield of a chip. A pixel array is formed with pixels arranged in a matrix. A drive control unit is provided for each set of pixel rows in the pixel array. The drive control unit operates to simultaneously drive the pixels included in the set of pixel rows. The present technology can be applied to a CMOS image sensor including A/D converter circuits for each column in a pixel array.

Solid-state imaging device and electronic apparatus including driver control circuits for driving multiple pixel rows

Growing community of inventors

Tokyo, Japan

Eiji Hirata