Renesas Electronics Corporation

Jsr Corporation

Canon Kabushiki Kaisha

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Nsk Corporation

Other

Yokogawa Hokushin Electric Corp.

Yamazaki Mazak Corporation

Kabushikikaishi Yokogawa Denki Seisakusho

Sharp Kabushiki Kaisha Corporation

Eiji Hayashi

Akihiro Kojima

Koichi Miyachi

Shinji Baba

Kozo Harada

Kyo Go

Kinji Yamada

Atsushi Shiota

Michinori Nishikawa

Takahiko Kurosawa

Toshiyuki Akiike

Kouichi Hasegawa

Tsutomu Kumagai

Kenichi Sumiya

Keiji Konno

Mutsuhiko Yoshioka

Shoichi Nakata

Takahiro Sugimura

Youngsoo Seo

Seo Youngsoon

Kosuke Yamamoto

Soichiro Kato

Rempei Nakata

Shinichi Terashita

Hideshi Miyajima

Yoshihiro Tomita

Hiroyuki Hakoi

Tomonori Sato

Norihiko Ikeda

Kohei Goto

Yoshio Kimura

Nobuhide Yamada

Makoto Sugiura

Tsutomu Ohkubo

Satoru Nakai

Toshiharu Kajita

Kouji Sumiya

Yuji Mizukami

Akira Iseki

Toshiyuki Muraki

Shigeo Shimizu

Tadahiro Shiba

Youngsoon Seo

Seo Youngsoo

Jyun Isayama

Shouichi Nakata

Takahiro Matsumoto

Satoshi Fukuma

Ryou Ueda

Toshiyuki Akike

Kouchi Hasegawa

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device and method of manufacturing

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substract, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.

Disclosed is a liquid crystal orientating agent which contains a liquid crystal orientating polyorganosiloxane obtained by reacting a specified reactive polyorganosiloxane typified by the hydrolysis condensate of 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane and a reactive compound which includes a specified compound typified by stearic acid. The liquid crystal orientating agent of this invention can form liquid crystal orientating films which have excellent liquid crystal orientating properties, a high level of heat resistance and light resistance, exhibit little reduction of voltage retention even in high temperature environments and when irradiated with light of high intensity, and excellent residual image characteristics, and it also has excellent storage stability.

Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display device

The present invention relates to a liquid crystal aligning agent which contains at least one selected from the group consisting of a polysiloxane having a structure represented by the following formula (S-0) and synthesized through the step of hydrolyzing or hydrolyzing/condensing a silane compound in the presence of an alkali metal compound or an organic base, a hydrolysate thereof and a condensate of the hydrolysate: (in the above formula (S-0), R is a group having an alkyl group with 4 to 20 carbon atoms, a fluoroalkyl group with 1 to 20 carbon atoms or a cyclohexyl group, or a group having 17 to 51 carbon atoms and a steroid skeleton, and Yis a hydroxyl group, an alkoxyl group having 1 to 10 carbon atoms, an alkyl group having 1 to 6 carbon atoms or an aryl group having 6 to 10 carbon atoms).

Liquid crystal aligning agent, method of producing a liquid crystal alignment film and liquid crystal display device

In an information processing apparatus for forming print data which can be interpreted by a printing apparatus in accordance with document data formed by an application in order to enable the user to easily set the switching between a printer and a mail box as destinations, a user interface which can set either a mail box mode to accumulate the print data into the printing apparatus without printing it or a printer output mode to sequentially print the print data received by the printing apparatus is provided.

Image processing apparatus, information processing method, and computer-readable memory medium storing program therein

The present invention relates to a liquid crystal aligning agent which contains a reaction product of at least one selected from the group consisting of a polysiloxane having a structure represented by the following formula (S-1), a hydrolysate thereof and a condensate of the hydrolysate and a compound represented by the following formula (1): (Yin the formula (S-1) is a hydroxyl group, an alkoxyl group having 1 to 10 carbon atoms, an alkyl group having 1 to 6 carbon atoms or an aryl group having 6 to 10 carbon atoms, R in the formula (1) is a group having an alkyl group with 4 to 20 carbon atoms, a fluoroalkyl group with 1 to 20 carbon atoms or a cyclohexyl group, or a group having 17 to 51 carbon atoms and a steroid skeleton, and Xin the formula (S-1) and Z in the formula (1) are reacted with each other to form a bond group for bonding the silicon atom in the formula (S-1) to R in the formula (1)).

Growing community of inventors

Tokyo, Japan

Eiji Hayashi