Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Panasonic Intellectual Property Management Co., Ltd.

Other

Minolta Company, Ltd.

Matsushita Electric Co., Ltd.

Matushita Electric Industrial Co., Ltd.

Masaki Aoki Et Al.

Eiji Fujii

Hideo Torii

Hideaki Adachi

Takakiyo Harigai

Yoshihisa Nagano

Atsushi Tomozawa

Yasuhiro Uemoto

Ryoichi Takayama

Yoshiaki Tanaka

Akihiro Matsuda

Yasuhiro Shimada

Atsuo Inoue

Koji Arita

Toru Nasu

Masaki Aoki

Satoru Fujii

Taku Hirasawa

Tatsuo Otsuki

Akiko Murata

Taketoshi Matsuura

Toyoji Ito

Ryuichi Murai

Masamichi Azuma

Hiroyuki Kawamura

Mitsuhiro Ohtani

Hiroyoshi Tanaka

Tomoyuki Komori

Yutaka Nishimura

Masumi Hattori

Yasuhisa Ishikura

Katsuyoshi Yamashita

Takashi Inami

Tooru Nasu

Tetsuya Asano

Michihito Ueda

Takeshi Kamada

Tatsuo Ootsuki

Hiroyuki Tanaka

Yuji Judai

Kazuo Umeda

Shinitirou Hayashi

Koichi Arita

Masaki Kibe

Nobuaki Nagao

Shinichiro Hayashi

Hideyuki Okinaka

Takahiro Hamada

Toshie Kutsunai

Yoneharu Takubo

Osamu Watanabe

Kiyoshi Kuribayashi

Nobuyuki Aoki

Kazuya Hashimoto

Yasufumi Izutsu

Yasutaka Horibe

Shintarou Hara

Keiichi Ochiai

Akira Nakamura

Nobue Yamanishi

Atsuya Yamamoto

Fumiaki Emoto

Satoshi Fujii

Masafumi Kobune

Kazumi Sadamatsu

Carlos Alberto Paz De Araujo

Tohru Nakagawa

Yoshihiro Tomita

Michael C Scott

Joseph D Cuchiaro

Kazuhiro Mori

Yukihiro Kaneko

Makoto Umetani

Shigenori Hayashi

Hideaki Horio

Akihiro Itoh

Yuuji Toyomura

Hideto Monji

Yasuhiko Horio

Hiroki Moriwake

Masayuki Okano

Keisaku Nakao

Kazunori Kobayashi

Koji Senda

Kohji Senda

Ken Kamata

Syunsuke Nishimura

Yasuko Nishimura

Sadayuki Imanishi

Emi Kawahara

Hajime Yasuoka

Yoshihiro Shimada

An exemplary lithium secondary battery includes: a positive electrode including a positive-electrode active substance layer; a negative electrode; and a solid electrolyte layer. The positive-electrode active substance layercomprises lithium cobaltate, and has an &#x3b1;-NaFeOtype crystal structure. The positive-electrode active substance layerincludes a lower layer, and an upper layerinterposed between the lower layer and the solid electrolyte layer. The lower layeris oriented in the (110) plane. The upper layeris composed only of first regionsoriented in the (110) plane and second regionsoriented in the (018) plane, the first and second regions being mixedly present in the xy plane of the positive-electrode active substance layer. The solid electrolyte layercomprises lithium lanthanum titanate, and has a tetragonal perovskite-type crystal structure. The solid electrolyte layeris oriented in the (110) or (102) plane.

All-solid lithium secondary battery

An exemplary all-solid lithium secondary battery includes a positive electrode including a positive-electrode active substance layer, a negative electrode, and a solid electrolyte layer interposed between the positive electrode and the negative electrode. The positive-electrode active substance layer is composed of lithium cobaltate, and has an &#x3b1;-NaFeOtype crystal structure. The positive-electrode active substance layer has a (018) plane oriented in a normal direction of a principal face of the positive-electrode active substance layer. The solid electrolyte layer is composed of lithium lanthanum titanate and has a tetragonal perovskite-type crystal structure. The solid electrolyte layer has a (110) plane or a (102) plane oriented in a normal direction of a principal face of the solid electrolyte layer.

A lithium secondary battery includes: a positive electrode including a positive-electrode active material layer; a negative electrode including a negative-electrode active material layer; and an ion conductor being lithium ion conductive and interposed between the positive electrode and the negative electrode. The positive-electrode active material layer is composed of lithium cobaltate, and has an &#x3b1;-NaFeOtype crystal structure. The positive-electrode active material layer is composed only of first regions oriented in the (110) plane and second regions oriented in the (018) plane, the first regions and the second regions being mixedly present in the xy plane of the positive-electrode active material layer, where x and y axes are defined as two axes that are parallel to the principal face of the positive-electrode active material layer, and a z axis is defined as an axis perpendicular to the principal face.

Lithium secondary battery

The present invention provides an NBT-BT film having a higher polarization-disappearance temperature. The present invention is a [(Na,Bi)Ba]TiOcrystal piezoelectric film. The [(Na,Bi)Ba]TiOcrystal piezoelectric film has a (001) orientation only. The [(Na,Bi)Ba]TiOcrystal piezoelectric film has a-axis length of not less than 0.390 nanometers and not more than 0.395 nanometers. The [(Na,Bi)Ba]TiOcrystal piezoelectric film has c-axis length of not less than 0.399 nanometers and not more than 0.423 nanometers (where x represents a value of not less than 0 and not more than 1). The [(Na,Bi)Ba]TiOcrystal piezoelectric film has a polarization-disappearance temperature of not less than 389 degrees Celsius.

NBT-BT crystal piezoelectric film and piezoelectric stacking structure comprising the same

Provided is a novel actuator and a method for driving the same. The present invention is an actuator comprising a first laminate comprising a first (Bi, Na, Ba) TiOlayer between first and second electrode layers, a second laminate comprising a second (Bi, Na, Ba) TiOlayer between third and fourth electrode layers, and a tilt part provided between the first and second laminates. Both of the first and second (Bi, Na, Ba) TiOlayers are preferentially oriented in a [011] crystalline axis direction. Voltages V, V, V, and Vwhich satisfy Requirement A: V&#x3e;Vand V&#x3c;Vor Requirement B: V&#x3c;Vand V&#x3e;Vare applied to the first-fourth electrode layers so as to tilt the tilt part. One of the first edge and the second edge is moved in the [011] crystalline axis direction and the other is moved in the reverse direction thereof.

Actuator and method for driving the same

Provided is a piezoelectric thin film including a non-lead-containing (that is, lead-free) ferroelectric material and having high piezoelectric performance comparable to that of PZT, and a method of manufacturing the piezoelectric thin film. The piezoelectric film according to the present invention comprises a laminate structure. The laminate structure comprises an electric film and a (1-x)(Na,Bi)TiO-xBaTiOfilm. x represents a value of not less than 0.03 and not more than 0.15. The (1-x)(Na,Bi)TiO-xBaTiOfilm has a (110) surface orientation only. The (1-x)(Na,Bi)TiO-xBaTiOfilm has an orthorhombic crystal structure only.

Piezoelectric thin film, method for manufacturing same, inkjet head, method for forming image using inkjet head, angular velocity sensor, method for measuring angular velocity using angular velocity sensor, piezoelectric power generation element, and method for generating power using piezoelectric power generation element

In order to provide a non-lead piezoelectric film having high crystalline orientation, low dielectric loss, high polarization-disappear temperature, and high piezoelectric constant, the present invention is a piezoelectric film comprising: a NaMlayerhaving a (001) orientation only; and a (1-&#x3b1;) (Bi, Na, Ba) TiO-&#x3b1;BiQOlayerhaving a (001) orientation only. The (1-&#x3b1;) (Bi, Na, Ba) TiO-&#x3b1;BiQOlayeris formed on the NaMlayer. M represents Pt, Ir, or PtIr. Q represents Fe, Co, ZnTi, or MgTi. x represents a value of not less than 0.002 and not more than 0.02. &#x3b1; represents a value of not less than 0.20 and not more than 0.50.

Piezoelectric film and method of manufacturing the piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

The present invention provides a piezoelectric film having a higher polarization-disappearance temperature Td and the usage thereof. The piezoelectric film of the present invention comprising an interface layer of (Na, Bi)TiO-BaTiOlayer having a (001) orientation only and a piezoelectric layer of a (Na, Bi)TiO-BaTiOlayer having a (001) orientation only, where x1 is 0.28-0.43, y1 is 0.49-0.60, x2 is 0.30-0.46, and y2 is 0.51-0.63. The piezoelectric layer is formed on the interface layer. The interface layer contains nickel. The interface layer has a Ni/Ti molar ratio of not less than 0.02.

Piezoelectric film and usage thereof

Provided is an NBT-BT lead-free piezoelectric film having a high crystalline orientation and a high piezoelectric constant. The present invention is a piezoelectric film comprising a NaMlayer and a (Bi, Na)TiO&#x2014;BaTiOlayer. The (Bi, Na) TiO&#x2014;BaTiOlayer is formed on the NaMlayer, where M represents Pt, Ir, or PtIr and x represents a value of not less than 0.002 and not more than 0.02. Both of the NaMlayer and the (Bi, Na) TiO&#x2014;BaTiOlayer have a (001) orientation only, a (110) orientation only, or a (111) orientation only.

Piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

The present invention provides a non-lead piezoelectric film having high crystalline orientation, the low dielectric loss, the high polarization-disappear temperature, the high piezoelectric constant, and the high linearity between an applied electric field and an amount of displacement. The present invention is a piezoelectric film comprising: a NaLaNiOlayer having only an (001) orientation and a (1-&#x3b1;) (Bi, Na, Ba) TiO-&#x3b1;BiQOlayer having only an (001) orientation. The (1-&#x3b1;) (Bi, Na, Ba) TiO-&#x3b1;BiQOlayer is formed on the NaLaNiOlayer. The character of Q represents Fe, Co, ZnTi, or MgTiThe character of x represents a value of not less than 0.01 and not more than 0.05. The character of y represents a value of not less than 0.05 and not more than 0.20. The character of &#x3b1; represents a value of not less than 0.20 and not more than 0.50.

A piezoelectric film comprising comprises a (NaBi)TiO&#x2014;BaTiOlayer with a (110) orientation, where 0.30&#x2266;x&#x2266;0.46 and 0.51&#x2266;y&#x2266;0.62, and the (NaBi)TiO&#x2014;BaTiOlayer has composition around a Morphotropic Phase Boundary.

Piezoelectric film and ink jet head and angular velocity sensor using the same

A solar cell element comprising a p-side electrode; a p-type group III-group V compound semiconductor layer; an n-type group III-group V compound semiconductor layer; an n-side group III-group V compound electrode layer; and a VZnlayer. The p-side electrode is electrically connected to the p-type group III-group V compound semiconductor layer. The p-type group III-group V compound semiconductor layer, the n-type group III-group V compound semiconductor layer, the n-side group III-group V compound electrode layer, and the VZnlayer are stacked in this order. The VZnlayer is in contact with the n-side group III-group V compound electrode layer; x represents a value of not less than 0.3 and not more than 0.99; and the VZnlayer has a thickness of not less than 1 nanometer and not more than 5 nanometers.

Solar cell element

The purpose of the present invention is to provide an angular velocity sensor capable of measuring an exact angular velocity, an ink jet head capable of producing an exact amount of ink, and a piezoelectric generating element capable of generating electric power due to positive piezoelectric effect. In the present invention, a piezoelectric film comprising a first electrode, a piezoelectric layer, and a second electrode is used. The first electrode comprises an electrode layer having a (001) orientation. The piezoelectric layer comprises a (NaBi)TiO&#x2014;BaTi0layer (0.30&#x2266;x&#x2266;0.46 and 0.51&#x2266;y&#x2266;0.62) having a (001) orientation.

Piezoelectric film and method of manufacturing the same, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

A solar cell comprises an n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode layer, an n-side electrode; and a ZnO transparent electrode layer. The n-side electrode layer consists of AgAu, and x represents a value of not less than 0.1 and not more than 0.5. The ZnO transparent electrode layer is composed of a plurality of ZnO columnar particles and each ZnO columnar particle has a longitudinal direction substantially parallel to a normal line of the ZnO transparent electrode layer. The cross-sectional area of each ZnO columnar particles that appears by cutting the ZnO columnar particles perpendicularly to the longitudinal direction increases from the upper surface of the n-side electrode layer to the upper surface of the ZnO transparent electrode layer.

Solar cell and method for fabricating the same

The purpose of the present invention is to provide an ink jet head capable of ejecting an exact amount of ink, an angular velocity sensor capable of measuring an exact angular velocity, and a piezoelectric generating element capable of generating an electric power due to positive piezoelectric effect, even when the applied electric field of 40 kV/cm or more is applied. The piezoelectric film used for the present invention comprises a piezoelectric layer and first and second electrodes which sandwich the piezoelectric layer therebetween, the first electrode comprises a (001) orientation, the piezoelectric layer is composed of (1-z)(NaBi)TiO-zBaTiOhaving a (001) orientation, x is not less than 0.30 and not more than 0.46, y is not less than 0.51 and not more than 0.62, and z is not less than 0.07 and not more than 0.09.

Ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the peizoelectric generating element

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Osaka, Japan

Eiji Fujii